Atomic Displacements Enabling the Observation of the Anomalous Hall Effect in a Non-Collinear Antiferromagnet.

Antiferromagnets with non-collinear spin structures display various properties that make them attractive for spintronic devices. Some of the most interesting examples are an anomalous Hall effect despite negligible magnetization and a spin Hall effect with unusual spin polarization directions. However, these effects can only be observed when the sample is set predominantly into a single antiferromagnetic domain state.

Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica.

In this work, we demonstrated the direct growth of GaN nanowires on indium tin oxide (ITO)-coated fused silica substrate. The nanowires were grown catalyst-free using plasma-assisted molecular beam epitaxy (PA-MBE). The effect of growth condition on the morphology and quality of the nanowires is systematically investigated.

Band Alignment at GaN/Single-Layer WSe Interface.

We study the band discontinuity at the GaN/single-layer (SL) WSe heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe/c-sapphire. We confirm that the WSe was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra.