Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance.

It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors. However, the temperature behavior of the characteristic dielectric properties, and, hence, the corresponding behavior of the negative capacitance, are still poorly understood, restraining the technological progress thereof. Here we investigate the temperature-dependent properties of domain structures in the SrTiO/PbTiO/SrTiO heterostructures and demonstrate that the temperature-thickness phase diagram of the system includes the ferroelectric and paraelectric regions, which exhibit different responses to the applied electric field.