Edge-of-chaos learning achieved by ion-electron-coupled dynamics in an ion-gating reservoir.

Physical reservoir computing has recently been attracting attention for its ability to substantially reduce the computational resources required to process time series data. However, the physical reservoirs that have been reported to date have had insufficient computational capacity, and most of them have a large volume, which makes their practical application difficult. Here, we describe the development of a Li electrolyte-based ion-gating reservoir (IGR), with ion-electron-coupled dynamics, for use in high-performance physical reservoir computing.

Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition.

Scandium (Sc) and yttrium (Y) co-doped ZrO (ScYSZ) thin films were prepared on a SiO-Si substrate via pulsed laser deposition (PLD) method. In order to obtain good quality thin films with the desired microstructure, various oxygen partial pressures (PO2) from 0.01 Pa to 10 Pa and substrate temperatures () from 25 °C to 800 °C were investigated.

The electric double layer effect and its strong suppression at Li solid electrolyte/hydrogenated diamond interfaces.

The electric double layer (EDL) effect at solid electrolyte/electrode interfaces has been a key topic in many energy and nanoelectronics applications (e.g., all-solid-state Li batteries and memristors).

Room-Temperature Manipulation of Magnetization Angle, Achieved with an All-Solid-State Redox Device.

An all-solid-state redox device, composed of magnetite (FeO) thin film and Li conducting electrolyte thin film, was fabricated for the manipulation of a magnetization angle at room temperature (RT). This is a key technology for the creation of efficient spintronics devices, but has not yet been achieved at RT by other carrier doping methods. Variations in magnetization angle and magnetic stability were precisely tracked through the use of planar Hall measurements at RT.