FinFET 6T-SRAM All-Digital Compute-in-Memory for Artificial Intelligence Applications: An Overview and Analysis.

Artificial intelligence (AI) has revolutionized present-day life through automation and independent decision-making capabilities. For AI hardware implementations, the 6T-SRAM cell is a suitable candidate due to its performance edge over its counterparts. However, modern AI hardware such as neural networks (NNs) access off-chip data quite often, degrading the overall system performance.

SRAM Cell Design Challenges in Modern Deep Sub-Micron Technologies: An Overview.

Microprocessors use static random-access memory (SRAM) cells in the cache memory design. As a part of the central computing component, their performance is critical. Modern system-on-chips (SoC) escalate performance pressure because only 10-15% of the transistors accounts for logic, while the remaining transistors are for the cache memory.

Investigation of low-voltage pulse parameters on electroporation and electrical lysis using a microfluidic device with interdigitated electrodes.

Electroporation (EP) of biological cells leads to the exchange of materials through the permeabilized cell membrane, while electrical lysis (EL) irreversibly disrupts the cell membrane. We report a microfluidic device to study these two phenomena with low-voltage excitation for lab-on-a-chip (LOC) applications. For systematic study of EP, we have employed a quantification metric: flow Index (FI) of EP.

Electrical lysis: dynamics revisited and advances in On-chip operation.

Electrical lysis (EL) is the process of breaking the cell membrane to expose the internal contents under an applied high electric field. Lysis is an important phenomenon for cellular analysis, medical treatment, and biofouling control. This paper aims to review, summarize, and analyze recent advancements on EL.