Breaking dielectric dilemma via polymer functionalized perovskite piezocomposite with large current density output.

Organometal halide perovskite (OHP) composites are flexible and easy to synthesize, making them ideal for ambient mechanical energy harvesting. Yet, the output current density from the piezoelectric nanogenerators (PENGs) remains orders of magnitude lower than their ceramic counterparts. In prior composites, high permittivity nanoparticles enhance the dielectric constant (ϵ) but reduce the dielectric strength (E).

Toward Scalable Electrochemical Exfoliation of Molybdenum Disulfide Powder through an Accessible Electrode Design.

Cathodic electrochemical intercalation/exfoliation of transition metal dichalcogenides (TMDs) with bulky tetraalkylammonium-based cations is gaining popularity as it avoids the semiconducting (2H) to metallic (1T) phase transformation in TMDs like molybdenum disulfide (MoS) and, generally, produces sheets with a larger aspect ratio - important for achieving conformal sheet-to-sheet contact in optoelectronic devices. Large single crystals are typically used as the precursor, but these are expensive, often inaccessible, and result in limited quantities of material. In this paper, a 3D-printable electrochemical cell capable of intercalating gram-scale quantities of commercially available TMD powders is presented.

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon.

In this work, native GaO is positioned between bulk gallium and degenerately doped p-type silicon (p-Si) to form Ga/GaO/SiO/p-Si junctions. These junctions show memristive behavior, exhibiting large current-voltage hysteresis. When cycled between -2.

Metal-free, single-polymer device exhibits resistive memory effect.

All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface.