Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering.

Contact engineering of two-dimensional semiconductors is a central issue for performance improvement of micro-/nanodevices based on these materials. Unfortunately, the various methods proposed to improve the Schottky barrier height normally require the use of high temperatures, chemical dopants, or complex processes. This work demonstrates that diffused electron beam energy (DEBE) treatment can simultaneously reduce the Schottky barrier height and enable the direct writing of electrical circuitry on van der Waals semiconductors.

Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides.

Phase-transition field-effect transistors (FETs) are a class of steep-slope devices that show abrupt on/off switching owing to the metal-insulator transition (MIT) induced in the contacting materials. An important avenue to develop phase-transition FETs is to understand the charge injection mechanism at the junction of the contacting MIT materials and semiconductor channels. Here, toward the realization of high-performance phase-transition FETs, we investigate the contact properties of heterojunctions between semiconducting transition-metal dichalcogenides (TMDCs) and vanadium dioxide (VO) that undergoes a MIT at a critical temperature () of approximately 340 K.

Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates.

Vanadium dioxide (VO) is an archetypal metal-insulator transition (MIT) material, which has been known for decades to show an orders-of-magnitude change in resistivity across the critical temperature of approximately 340 K. In recent years, VO has attracted increasing interest for electronic and photonic applications, along with advancement in thin film growth techniques. Previously, thin films of VO were commonly grown on rigid substrates such as crystalline oxides and bulk semiconductors, but the use of transferrable materials as the growth substrates can provide versatility in applications, including transparent and flexible devices.

Gate-Tunable Thermal Metal-Insulator Transition in VO Monolithically Integrated into a WSe Field-Effect Transistor.

Vanadium dioxide (VO) shows promise as a building block of switching and sensing devices because it undergoes an abrupt metal-insulator transition (MIT) near room temperature, where the electrical resistivity changes by orders of magnitude. A challenge for versatile applications of VO is to control the MIT by gating in the field-effect device geometry. Here, we demonstrate a gate-tunable abrupt switching device based on a VO microwire that is monolithically integrated with a two-dimensional (2D) tungsten diselenide (WSe) semiconductor by van der Waals stacking.

Virtual substrate method for nanomaterials characterization.

Characterization techniques available for bulk or thin-film solid-state materials have been extended to substrate-supported nanomaterials, but generally non-quantitatively. This is because the nanomaterial signals are inevitably buried in the signals from the underlying substrate in common reflection-configuration techniques. Here, we propose a virtual substrate method, inspired by the four-point probe technique for resistance measurement as well as the chop-nod method in infrared astronomy, to characterize nanomaterials without the influence of underlying substrate signals from four interrelated measurements.

Measuring the Complex Optical Conductivity of Graphene by Fabry-Pérot Reflectance Spectroscopy.

We have experimentally studied the dispersion of optical conductivity in few-layer graphene through reflection spectroscopy at visible wavelengths. A laser scanning microscope (LSM) with a supercontinuum laser source measured the frequency dependence of the reflectance of exfoliated graphene flakes, including monolayer, bilayer and trilayer graphene, loaded on a Si/SiO Fabry-Pérot resonator in the 545-700 nm range. The complex refractive index of few-layer graphene, n - ik, was extracted from the reflectance contrast to the bare substrate.

Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning.

The polarity of the charge carriers injected through Schottky junctions of α-phase molybdenum ditelluride (α-MoTe2) and various metals was characterized. We found that the Fermi-level pinning in the metal/α-MoTe2 Schottky junction is so weak that the polarity of the carriers (electron or hole) injected from the junction can be controlled by the work function of the metals, in contrast to other transition metal dichalcogenides such as MoS2. From the estimation of the Schottky barrier heights, we obtained p-type carrier (hole) injection from a Pt/α-MoTe2 junction with a Schottky barrier height of 40 meV at the valence band edge.

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts.

Transition metal oxides show much promise as effective p-type contacts and dopants in electronics based on transition metal dichalcogenides. Here we report that atomically thin films of under-stoichiometric tungsten oxides (WOx with x < 3) grown on tungsten diselenide (WSe2) can be used as both controlled charge transfer dopants and low-barrier contacts for p-type WSe2 transistors. Exposure of atomically thin WSe2 transistors to ozone (O3) at 100 °C results in self-limiting oxidation of the WSe2 surfaces to conducting WOx films.

Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors.

Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.

Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors.

A doping-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.

Self-limiting layer-by-layer oxidation of atomically thin WSe2.

Growth of a uniform oxide film with a tunable thickness on two-dimensional transition metal dichalcogenides is of great importance for electronic and optoelectronic applications. Here we demonstrate homogeneous surface oxidation of atomically thin WSe2 with a self-limiting thickness from single- to trilayers. Exposure to ozone (O3) below 100 °C leads to the lateral growth of tungsten oxide selectively along selenium zigzag-edge orientations on WSe2.

Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers.

Understanding the interfacial electrical properties between metallic electrodes and low-dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness.

Ambipolar MoTe2 transistors and their applications in logic circuits.

We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (Vbg) and drain-source voltage (Vds).

Strong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe₂.

Two-dimensional layered crystals could show phonon properties that are markedly distinct from those of their bulk counterparts, because of the loss of periodicities along the c-axis directions. Here we investigate the phonon properties of bulk and atomically thin α-MoTe2 using Raman spectroscopy. The Raman spectrum of α-MoTe2 shows a prominent peak of the in-plane E(1)2g mode, with its frequency upshifting with decreasing thickness down to the atomic scale, similar to other dichalcogenides.

Charge inhomogeneity determines oxidative reactivity of graphene on substrates.

Single-layer graphene (SLG) supported on SiO(2) shows anomalously large chemical reactivity compared to thicker graphene, with charge inhomogeneity-induced potential fluctuations or topographic corrugations proposed as the cause. Here we systematically probe the oxidative reactivity of graphene supported on substrates with different surface roughnesses and charged impurity densities: hexagonal boron nitride (hBN), mica, thermally grown SiO(2) on Si, and SiO(2) nanoparticle thin films. SLG on low charge trap density hBN is not etched and shows little doping after oxygen treatment at temperatures up to 550 °C, in sharp contrast with oxidative etching under similar conditions of graphene on high charge trap density SiO(2) and mica.

Modeling noncontact atomic force microscopy resolution on corrugated surfaces.

Key developments in NC-AFM have generally involved atomically flat crystalline surfaces. However, many surfaces of technological interest are not atomically flat. We discuss the experimental difficulties in obtaining high-resolution images of rough surfaces, with amorphous SiO(2) as a specific case.