Impact of thermal oxidation parameters on micro-hardness and hot corrosion of Ti-6Al-3Mo-2Nb-2Sn-2Zr-1.5Cr alloy.

Protective oxide layers on Ti-6Al-3Mo-2Nb-2Sn-2Zr-1.5Cr (TC21) alloy with equiaxed microstructure considerably influence micro-hardness and hot corrosion resistance. The present work's thermal oxidation of TC21 alloy was performed at 600, 700, and 800 °C for 5, 20, and 50 h durations.

Correction: Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors arsenic incorporation.

[This corrects the article DOI: 10.1039/D3RA00805C.].

Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors arsenic incorporation.

GeSn compounds have made many interesting contributions in photodetectors (PDs) over the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn incorporation in Ge alters the cut off wavelength. In the present article, p-i-n structures based on GeSn junctions were fabricated to serve as PDs.

Effect of oxide layers formed by thermal oxidation on mechanical properties and NaCl-induced hot corrosion behavior of TC21 Ti-alloy.

In the current study on TC21 Ti-alloy (6.5Al-3Mo-1.9Nb-2.

Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices.

Heterostructures based on the GeSn nanocompound have high impact on integrated photonics devices. The promising feature of GeSn nanostructures is its direct bandgap transition that is a result of Sn incorporation in the Ge networks, forming a strained structure. Herein, we demonstrate a deep survey of the strain-controlling mechanisms in GeSn nanomaterials with different methodologies.

Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation.

Metal-induced crystallization of amorphous silicon is a promising technique for developing high-quality and cheap optoelectronic devices. Many attempts tried to enhance the crystal growth of polycrystalline silicon via aluminum-induced crystallization at different annealing times and temperatures. In this research, thin films of aluminum/silicon (Al/Si) and aluminum/silicon/tin (Al/Si/Sn) layers were fabricated using the thermal evaporation technique with a designed wire tungsten boat.