Equivalent circuit of a silicon-lithium p-i-n nuclear radiation detector.

Nuclear radiation detectors are indispensable for research in the field of nuclear radiation, X-ray spectroscopy and other areas. Interest in silicon p-i-n detectors of nuclear radiation is increasing today due to the possibility of their operation under normal conditions. In this paper, an equivalent circuit of a silicon-lithium p-i-n nuclear radiation detector is proposed.

Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods.

In this paper, we described a method of double-sided diffusion and drift of lithium-ions into monocrystalline silicon for the formation of the large-sized, p-i-n structured Si(Li) radiation detectors. The p-i-n structure is a p-n junction with a doped region, where the "i-region" is between the n and the p layers. A well-defined i-region is usually associated with p or n layers with high resistivities.