Tunable Mid-Infrared Interband Emission from Tensile-Strained InGaAs Quantum Dots.

We demonstrate the ability to tailor self-assembled growth of InGaAs quantum dots (QDs) on GaSb(111)A surfaces by molecular beam epitaxy. Spontaneous formation via the Volmer-Weber growth mode produces QDs with excellent structural and optical quality. By harnessing tensile strain to reduce their band gap energy, these QDs are characterized by light emission that extends into the midwave infrared wavelength range of 3.