Recently, heavily doped semiconductors have been emerging as an alternative to low-loss plasmonic materials. InN, belonging to the group III nitrides, possesses the unique property of surface electron accumulation (SEA), which provides a 2D electron gas (2DEG) system. In this report, we demonstrated the surface plasmon properties of InN nanoparticles originating from SEA using the real-space mapping of the surface plasmon fields for the first time.
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