Transport properties of rippled graphene.

The exceptionally high mobility of carriers in graphene is one of its defining characteristics, especially in view of potential applications. Therefore it is of both practical and fundamental importance to understand the mechanisms responsible for limiting the values of the mobility. The aim of the paper is to study theoretically one such mechanism, i.

Dynamic ferromagnetic proximity effect in photoexcited semiconductors.

The spin dynamics of photoexcited carriers in semiconductors in contact with a ferromagnet is treated theoretically and compared with time-dependent Faraday rotation experiments. The long-time response of the system is found to be governed by the first tens of picoseconds in which the excited plasma interacts strongly with the intrinsic interface between the semiconductor and the ferromagnet in spite of the existence of a Schottky barrier in equilibrium.