Enhancing anti-adhesion properties by designing microstructure - the microscopy and spectroscopy study of the intercellular bacterial response.

This study is the first one that investigates in detail the bacterial intercellular response to the high density of crystallographic defects including vacancies created in Cu by high pressure torsion. To this aim, samples were deformed by high pressure torsion and afterward, their antibacterial properties against Staphylococcus aureus were analyzed in adhesion tests. As a reference an annealed sample was applied.

The role of defect charge, crystal chemistry, and crystal structure on positron lifetimes of vacancies in oxides.

Density functional theory based positron lifetime (PL) calculations for cation and oxygen monovacancies in a range of oxides-hematite, magnetite, hercynite, and alumina-have been conducted to compare the impact of defect chemistry and crystal structure on the predicted lifetimes. The role of defect charge state has also been examined. A comparison across the same type of crystalline structure but different composition shows that oxygen vacancies only induce a slight increase in the positron-electron overlap and thus barely modify the PL as compared to the bulk.

Insights into the LiMnO Cathode Stability in Aqueous Electrolytes.

LiMnO (LMO) cathodes present large stability when cycled in aqueous electrolytes, contrasting with their behavior in conventional organic electrolytes in lithium-ion batteries (LIBs). To elucidate the mechanisms underlying this distinctive behavior, we employ unconventional characterization techniques, including variable energy positron annihilation lifetime spectroscopy (VEPALS), tip-enhanced Raman spectroscopy (TERS), and macro-Raman spectroscopy (with tens of μm-size laser spot). These still rather unexplored techniques in the battery field provide complementary information across different length scales, revealing previously hidden features.

Regulating Oxygen Ion Transport at the Nanoscale to Enable Highly Cyclable Magneto-Ionic Control of Magnetism.

Magneto-ionics refers to the control of magnetic properties of materials through voltage-driven ion motion. To generate effective electric fields, either solid or liquid electrolytes are utilized, which also serve as ion reservoirs. Thin solid electrolytes have difficulties in (i) withstanding high electric fields without electric pinholes and (ii) maintaining stable ion transport during long-term actuation.

Flexomagnetism and vertically graded Néel temperature of antiferromagnetic CrO thin films.

Antiferromagnetic insulators are a prospective materials platform for magnonics, spin superfluidity, THz spintronics, and non-volatile data storage. A magnetomechanical coupling in antiferromagnets offers vast advantages in the control and manipulation of the primary order parameter yet remains largely unexplored. Here, we discover a new member in the family of flexoeffects in thin films of CrO.

Chemical deposition of CuO films with ultra-low resistivity: correlation with the defect landscape.

Cuprous oxide (CuO) is a promising p-type semiconductor material for many applications. So far, the lowest resistivity values are obtained for films deposited by physical methods and/or at high temperatures (~1000 °C), limiting their mass integration. Here, CuO thin films with ultra-low resistivity values of 0.

Nanoscaled LiMnO for Extended Cycling Stability in the 3 V Plateau.

Extending the potential window toward the 3 V plateau below the typically used range could boost the effective capacity of LiMnO spinel cathodes. This usually leads to an "overdischarge" of the cathode, which can cause severe material damage due to manganese dissolution into the electrolyte and a critical volume expansion (induced by Jahn-Teller distortions). As those factors determine the stability and cycling lifetime for all-solid-state batteries, the operational window of LiMnO is usually limited to 3.

Defect Nanostructure and its Impact on Magnetism of α-Cr O Thin Films.

Thin films of the magnetoelectric insulator α-Cr O are technologically relevant for energy-efficient magnetic memory devices controlled by electric fields. In contrast to single crystals, the quality of thin Cr O films is usually compromised by the presence of point defects and their agglomerations at grain boundaries, putting into question their application potential. Here, the impact of the defect nanostructure, including sparse small-volume defects and their complexes is studied on the magnetic properties of Cr O thin films.

Cation non-stoichiometry in Fe:SrTiO thin films and its effect on the electrical conductivity.

The interplay of structure, composition and electrical conductivity was investigated for Fe-doped SrTiO thin films prepared by pulsed laser deposition. Structural information was obtained by reciprocal space mapping while solution-based inductively-coupled plasma optical emission spectroscopy and positron annihilation lifetime spectroscopy were employed to reveal the cation composition and the predominant point defects of the thin films, respectively. A severe cation non-stoichiometry with Sr vacancies was found in films deposited from stoichiometric targets.

Vacancy-Hydrogen Interaction in Niobium during Low-Temperature Baking.

A recently discovered modified low-temperature baking leads to reduced surface losses and an increase of the accelerating gradient of superconducting TESLA shape cavities. We will show that the dynamics of vacancy-hydrogen complexes at low-temperature baking lead to a suppression of lossy nanohydrides at 2 K and thus a significant enhancement of accelerator performance. Utilizing Doppler broadening Positron Annihilation Spectroscopy, Positron Annihilation Lifetime Spectroscopy and instrumented nanoindentation, samples made from European XFEL niobium sheets were investigated.

Chemical manipulation of hydrogen induced high p-type and n-type conductivity in GaO.

Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in β-GaO, an ultra-wide band gap oxide, by controlling hydrogen incorporation in the lattice without further doping.

Magnetic response of FeRh to static and dynamic disorder.

Atomic scale defects generated using focused ion as well as laser beams can activate ferromagnetism in initially non-ferromagnetic B2 ordered alloy thin film templates. Such defects can be induced locally, confining the ferromagnetic objects within well-defined nanoscale regions. The characterization of these atomic scale defects is challenging, and the mechanism for the emergence of ferromagnetism due to sensitive lattice disordering is unclear.

Enhanced flux pinning isotropy by tuned nanosized defect network in superconducting YBaCuO films.

Striving to improve the critical current density Jc of superconducting YBaCuO (YBCO) thin films via enhanced vortex pinning, the interplay between film growth mechanisms and the formation of nanosized defects, both natural and artificial, is systematically studied in undoped and BaZrO (BZO)-doped YBCO thin films. The films were grown via pulsed laser deposition (PLD), varying the crystal grain size of the targets in addition to the dopant content. The microstructure of the PLD target has been observed to have a great impact on that of the deposited thin films, including the formation of vortex pinning centers, which has direct implications on the superconducting performance, especially on the isotropy of flux pinning properties.

Purely antiferromagnetic magnetoelectric random access memory.

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet CrO, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature.

InP nanocrystals on silicon for optoelectronic applications.

One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.

n-InAs nanopyramids fully integrated into silicon.

InAs with an extremely high electron mobility (up to 40,000 cm(2)/V s) seems to be the most suitable candidate for better electronic devices performance. Here we present a synthesis of inverted crystalline InAs nanopyramids (NPs) in silicon using a combined hot ion implantation and millisecond flash lamp annealing techniques. Conventional selective etching was used to form the InAs/Si heterojunction.

Direct magnetic patterning due to the generation of ferromagnetism by selective ion irradiation of paramagnetic FeAl alloys.

Sub-100-nm magnetic dots embedded in a non-magnetic matrix are controllably generated by selective ion irradiation of paramagnetic Fe(60)Al(40) (atomic %) alloys, taking advantage of the disorder-induced magnetism in this material. The process is demonstrated by sequential focused ion beam irradiation and by in-parallel broad-beam ion irradiation through lithographed masks. Due to the low fluences used, this method results in practically no alteration of the surface roughness.