Correction: A graphene/h-BN MEMS varactor for sub-THz and THz applications.

Correction for 'A graphene/h-BN MEMS varactor for sub-THz and THz applications' by Piotr A. Dróżdż , , 2023, https://doi.org/10.

A graphene/h-BN MEMS varactor for sub-THz and THz applications.

Recent development of terahertz systems has created the need for new elements operating in this frequency band, , fast tunable devices such as varactors. Here, we present the process flow and characterization of a novel electronic variable capacitor device that is made with the use of 2D metamaterials such as graphene (GR) or hexagonal boron nitride (h-BN). Comb-like structures are etched into a silicon/silicon nitride substrate and a metal electrode is deposited at the bottom.

Piezoelectric Response and Substrate Effect of ZnO Nanowires for Mechanical Energy Harvesting in Internet-of-Things Applications.

Recently, an unprecedented growth in the internet of things (IoT) is being observed, which is becoming the main driver for the entire semiconductor industry. Reliable maintenance and servicing of the IoT is becoming challenging, knowing that the IoT nodes outnumber the human population by a factor of seven. Energy harvesting (EH) can overcome those difficulties, delivering the energyautonomous IoT nodes to the market.

Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation.

The gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced sensing methodology and intermittent UV irradiation.

The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors.

In this work we demonstrated the process of co-deposition of copper-tin sulfide species by the atomic layer deposition (ALD) technique using all-low-cost precursors. For the deposition of tin species, the tin(IV) chloride SnClwas used successfully for the first time in the ALD process. Moreover, we showed that the successful deposition of the tin sulfide component was conditioned by the pre-deposition of CuSlayer.