Optimum Choice of Randomly Oriented Carbon Nanotube Networks for UV-Assisted Gas Sensing Applications.

We investigated the noise and photoresponse characteristics of various optical transparencies of nanotube networks to identify an optimal randomly oriented network of carbon nanotube (CNT)-based devices for UV-assisted gas sensing applications. Our investigation reveals that all of the studied devices demonstrate negative photoconductivity upon exposure to UV light. Our studies confirm the effect of UV irradiation on the electrical properties of CNT networks and the increased photoresponse with decreasing UV light wavelength.

Correction: A graphene/h-BN MEMS varactor for sub-THz and THz applications.

Correction for 'A graphene/h-BN MEMS varactor for sub-THz and THz applications' by Piotr A. Dróżdż , , 2023, https://doi.org/10.

A graphene/h-BN MEMS varactor for sub-THz and THz applications.

Recent development of terahertz systems has created the need for new elements operating in this frequency band, , fast tunable devices such as varactors. Here, we present the process flow and characterization of a novel electronic variable capacitor device that is made with the use of 2D metamaterials such as graphene (GR) or hexagonal boron nitride (h-BN). Comb-like structures are etched into a silicon/silicon nitride substrate and a metal electrode is deposited at the bottom.

Passive Photonic Integrated Circuits Elements Fabricated on a Silicon Nitride Platform.

The fabrication processes for silicon nitride photonic integrated circuits evolved from microelectronics components technology-basic processes have common roots and can be executed using the same type of equipment. In comparison to that of electronics components, passive photonic structures require fewer manufacturing steps and fabricated elements have larger critical dimensions. In this work, we present and discuss our first results on design and development of fundamental building blocks for silicon nitride integrated photonic platform.

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide.

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures-trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond.