The influence of solvent refractive index on the photoluminescence decay of thick-shell gradient-alloyed colloidal quantum dots investigated in a wide range of delay times.

Colloidal semiconductor quantum dots have many potential optical applications, including quantum dot light-emitting diodes, single-photon sources, or biological luminescent markers. The optical properties of colloidal quantum dots can be affected by their dielectric environment. This study investigated the photoluminescence (PL) decay of thick-shell gradient-alloyed colloidal semiconductor quantum dots as a function of solvent refractive index.

Flexible Quantum-Dot Light-Emitting Diodes Using Embedded Silver Mesh Transparent Electrodes Manufactured by an Ultraprecise Deposition Method.

Transparent conductive electrodes (TCEs) fabricated onto flexible substrates are crucial parts of organic-light-emitting diodes (OLEDs), which are vastly utilized for display and lightning applications. Indium tin oxide (ITO), which is so far the most popular material for transparent and conductive electrodes, is found to be an unsuitable candidate for flexible devices mostly due to its brittleness. Here, we present a novel approach for the fabrication of transparent, conductive, and flexible electrodes for optoelectronic applications made of silver metal mesh by an ultraprecise deposition (UPD) method.

Effect of Air Exposure of ZnMgO Nanoparticle Electron Transport Layer on Efficiency of Quantum-Dot Light-Emitting Diodes.

We demonstrate the effect of air exposure on optical and electrical properties of ZnMgO nanoparticles (NPs) typically exploited as an electron transport layer in Cd-based quantum-dot light-emitting diodes (QLEDs). We analyze the roles of air components in modifying the electrical properties of ZnMgO NPs, which reveals that HO enables the reduction of hole leakage while O alters the character of charge transport due to its ability to trap electrons. As a result, the charge balance in the QDs layer is improved, which is confirmed by voltage-dependent measurements of photoluminescence quantum yield.

Quantum-dot light-emitting diode with ultrathin Au electrode embedded in solution-processed phosphomolybdic acid.

We proposed to exploit phosphomolybdic acid (PMA) as a cost-efficient MoO source for combined spin-coating/sputtering/spin-coating deposition of a MoO /Au/MoO (MAM) composite electrode. The bottom PMA layer provides perfect wetting conditions for ultrathin Au film sputtering and prevents the formation of gold islands on the glass surface, while the top PMA layer helps to reduce light reflection. By optimizing the thickness of ultrathin Au films and PMA layers, we achieved maximum transmittance of 79% at 550 nm and a sheet resistance of only 22 Ω sq which is comparable to the resistance of ITO substrates (20 Ω sq).