Correlation-Assisted Pixel Array for Direct Time of Flight.

Time of flight is promising technology in machine vision and sensing, with an emerging need for low power consumption, a high image resolution, and reliable operation in high ambient light conditions. Therefore, we propose a novel direct time-of-flight pixel using the single-photon avalanche diode (SPAD) sensor, with an in-pixel averaging method to suppress ambient light and detect the laser pulse arrival time. The system utilizes two orthogonal sinusoidal signals applied to the pixel as inputs, which are synchronized with a pulsed laser source.

Correction: Jegannathan et al. An Overview of CMOS Photodetectors Utilizing Current-Assistance for Swift and Efficient Photo-Carrier Detection. 2021, , 4576.

There was an error in the original publication, in Equation (5) [...

An Overview of CMOS Photodetectors Utilizing Current-Assistance for Swift and Efficient Photo-Carrier Detection.

This review paper presents an assortment of research on a family of photodetectors which use the same base mechanism, current assistance, for the operation. Current assistance is used to create a drift field in the semiconductor, more specifically silicon, in order to improve the bandwidth and the quantum efficiency. Based on the detector and application, the drift field can be static or modulated.

Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance.

Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well. In this work, we present a second improved version of the "current-assisted" single-photon avalanche diode, fabricated in a conventional 350 nm CMOS process, having good NIR sensitivity owing to 14 μm thick epilayer for photon absorption.