Electric field induced removal of the biexciton binding energy in a single quantum dot.

We control the electrostatic environment of a single InAsP quantum dot in an InP nanowire with two contacts and two lateral gates positioned to an individual nanowire. We empty the quantum dot of excess charges and apply an electric field across its radial dimension. A large tuning range for the biexciton binding energy of 3 meV is obtained in a lateral electric field.

Single electron charging in optically active nanowire quantum dots.

We report optical experiments of a charge tunable, single nanowire quantum dot subject to an electric field tuned by two independent voltages. First, we control tunneling events through an applied electric field along the nanowire growth direction. Second, we modify the chemical potential in the nanowire with a back-gate.

Selective excitation and detection of spin states in a single nanowire quantum dot.

We report exciton spin memory in a single InAs(0.25)P(0.75) quantum dot embedded in an InP nanowire.

Zinc incorporation via the vapor-liquid-solid mechanism into InP nanowires.

We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires via a gold catalyst particle. We demonstrate this by synthesizing axial pn-junctions, chemically etching them, and fabricating electrical contacts in a vertical configuration. Electrical measurements show clear diode behavior.