Publications by authors named "M Wuttig"
A systematic study of the impact of film thickness on the properties of thin Bi films is presented. To this end, epitaxial films of high quality have been grown on a Si (111) substrate with thicknesses ranging from 1.9 to 29.
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- * The study focuses on two key processes during bond rupture in laser-assisted field emission: the probability of molecular ions being released (PMI) and the probability of multiple fragments being emitted simultaneously (PME).
- * The ability to differentiate between solids with various types of bonds (metallic, covalent, metavalent) based on their PMI and PME values paves the way for enhanced understanding and design of advanced materials, potentially leading to the new term bonding probe tomography (BPT).
Article Synopsis
- Engineering electronic band structures through doping is essential for enhancing thermoelectric performance in materials.
- The study reveals that the Sn-s states in SnTe significantly impact the density of states at the valence band's top, influencing band structure tuning.
- A design approach is presented, identifying Al as an effective dopant that, combined with Sb and AgBiTe, leads to a record high average ZT of 1.15 across a temperature range of 300 to 873 K.
Metavalent bonding is a unique bonding mechanism responsible for exceptional properties of materials used in thermoelectric, phase-change, and optoelectronic devices. For thermoelectrics, the desired performance of metavalently bonded materials can be tuned by doping foreign atoms. Incorporating dopants to form solid solutions or second phases is a crucial route to tailor the charge and phonon transport.
View Article and Find Full Text PDFChanges in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving the PC memory performance. In this study, we have controlled the bonding characteristics of GeTe/SbTe superlattices (SLs) via bismuth (Bi) doping.
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