Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films.

Characterization of thermoelectric transport properties for temperature sensing, cooling, and energy harvesting applications is necessary for a reliable device performance in progressively minimized computer chips. In this contribution, we present a fully automated thermovoltage and sheet resistance measurement setup, which is calibrated and tested for the production of silicon- and silicon-germanium-doped as well as silicide complementary metal-oxide-semiconductor-compatible thin films. A LabVIEW-programmed software application automatically controls the measurement and recording of thermovoltages at individually defined temperature set points.

On Fe-Fe Dumbbells in the Ideal and Real Structures of FeGa.

The intermetallic phase FeGa belongs to the rare examples of substances with transition metals where semiconducting behavior is found. The necessary electron count of 17 ve/fu can be formally derived from eight Fe-Ga and one Fe-Fe two-center-two-electron bond. The situation is reminiscent of the well-known Fe(CO) scenario, where a direct Fe-Fe two-center-two-electron bond was shown to not be present.

Disorder in the composite crystal structure of the manganese `disilicide' MnSi1.73 from powder X-ray diffraction data.

The crystal structure of the higher manganese silicide MnSi1.7 (known in the literature as HMS) is investigated in samples with different compositions obtained by different techniques at temperatures not higher than 1273 K. Powder X-ray diffraction was applied.