Quantification of Crystalline Phases in HfZrO Thin Films through Complementary Infrared Spectroscopy and Supercell Simulations.

In the quest for thinner and more efficient ferroelectric devices, HfZrO (HZO) has emerged as a potential ultrathin and lead-free ferroelectric material. Indeed, when deposited on a TiN electrode, 1-25 nm thick HZO exhibits excellent ferroelectricity capability, allowing the prospective miniaturization of capacitors and transistor devices. To investigate the origin of ferroelectricity in HZO thin films, we conducted a far-infrared (FIR) spectroscopic study on 5 HZO films with thicknesses ranging from 10 to 52 nm, both within and out of the ferroelectric thickness range where ferroelectric properties are observed.

Far-Infrared Signatures for a Two-Step Pressure-Driven Metallization in Transition Metal Dichalcogenides.

We present a high-pressure investigation of the semiconductor-to-metal transition in MoS and WS carried out by synchrotron-based far-infrared spectroscopy, to reconcile the controversial estimates of the metallization pressure found in the literature and gain new insight into the mechanisms ruling this electronic transition. Two spectral descriptors are found indicative of the onset of metallicity and of the origin of the free carriers in the metallic state: the absorbance spectral weight, whose abrupt increase defines the metallization pressure threshold, and the asymmetric line shape of the E peak, whose pressure evolution, interpreted within the Fano model, suggests the electrons in the metallic state originate from n-type doping levels. Combining our results with those reported in the literature, we hypothesize a two-step mechanism is at work in the metallization process, in which the pressure-induced hybridization between doping and conduction band states drives an early metallic behavior, while the band gap closes at higher pressures.

Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H-[Formula: see text].

High pressure is a proven effective tool for modulating inter-layer interactions in semiconducting transition metal dichalcogenides, which leads to significant band structure changes. Here, we present an extended infrared study of the pressure-induced semiconductor-to-metal transition in 2H-[Formula: see text], which reveals that the metallization process at 13-15 GPa is not associated with the indirect band-gap closure, occurring at 24 GPa. A coherent picture is drawn where n-type doping levels just below the conduction band minimum play a crucial role in the early metallization transition.

Lattice dynamics of BaFeSe.

This paper presents a study of the lattice dynamics in BaFeSe. We combined first-principle calculations, infrared measurements and a thorough symmetry analysis. Our study confirms thatcannot be the space group of BaFeSe, even at room temperature.

Grazing-angle reflectivity setup for the low-temperature infrared spectroscopy of two-dimensional systems.

A new optical setup is described that allows the reflectivity at grazing incidence to be measured, including ultrathin films and two-dimensional electron systems (2DES) down to liquid-helium temperatures, by exploiting the Berreman effect and the high brilliance of infrared synchrotron radiation. This apparatus is well adapted to detect the absorption of a 2DES of nanometric thickness, namely that which forms spontaneously at the interface between a thin film of LaAlO and its SrTiO substrate, and to determine its Drude parameters.