Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals.

Room temperature lateral p-i-nlight-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted pand ncontact regions made it possible to reduce the impurity activation temperature from 800 °С-1100 °С to 600 °С, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands.

Emission Enhancement of Ge/Si Quantum Dots in Hybrid Structures with Subwavelength Lattice of Al Nanodisks.

The effects of resonance interaction of plasmonic and photonic modes in hybrid metal-dielectric structures with square Al nanodisk lattices coupled with a Si waveguide layer were investigated using micro-photoluminescence (micro-PL) spectroscopy. As radiation sources, GeSi quantum dots were embedded in the waveguide. A set of narrow PL peaks superimposed on the broad bands were observed in the range of quantum dot emissions.

Tuning the Luminescence Response of an Air-Hole Photonic Crystal Slab Using Etching Depth Variation.

Detailed studies of the luminescent properties of the Si-based 2D photonic crystal (PhC) slabs with air holes of various depths are reported. Ge self-assembled quantum dots served as an internal light source. It was obtained that changing the air hole depth is a powerful tool which allows tuning of the optical properties of the PhC.

Interaction of Ge(Si) Self-Assembled Nanoislands with Different Modes of Two-Dimensional Photonic Crystal.

The interaction of Ge(Si)/SOI self-assembled nanoislands with modes of photonic crystal slabs (PCS) with a hexagonal lattice is studied in detail. Appropriate selection of the PCS parameters and conditions for collecting the photoluminescence (PL) signal allowed to distinguish the PCS modes of different physical nature, particularly the radiative modes and modes associated to the bound states in the continuum (BIC). It is shown that the radiative modes with relatively low Q-factors could provide a increase greater than an order of magnitude in the integrated PL intensity in the wavelength range of 1.

Optical Properties and Upconversion Luminescence of BaTiO Xerogel Structures Doped with Erbium and Ytterbium.

Erbium upconversion (UC) photoluminescence (PL) from sol-gel derived barium titanate (BaTiO:Er) xerogel structures fabricated on silicon, glass or fused silica substrates has been studied. Under continuous-wave excitation at 980 nm and nanosecond pulsed excitation at 980 and 1540 nm, the fabricated structures demonstrate room temperature PL with several bands at 410, 523, 546, 658, 800 and 830 nm, corresponding to the H → I, H → I, S → I, F→ I and I→ I transitions of Er ions. The intensity of erbium UC PL increases when an additional macroporous layer of strontium titanate is used beneath the BaTiO xerogel layer.