Theoretical Study of Quaternary nBp InGaAsSb SWIR Detectors for Room Temperature Condition.

This paper presents a theoretical analysis of an nBp infrared barrier detector's performance intended to operate at a room temperature (300 K) based on AB materials-InGaAsSb quaternary compound-lattice-matched to the GaSb substrate with a p-n heterojunction ternary AlGaSb barrier. Numerical simulations were performed using a commercial Crosslight Software-package APSYS. The band structure of the nBp detector and the electric field distribution for the p-n heterojunction with and without a potential barrier were determined.

The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials.

The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE-reactive ion etching). The deep-level transient spectroscopy (DLTS) method was used to determine the defect levels occurring in the analyzed structures.

Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber.

The long-wave infrared (LWIR) interband cascade detector with type-II superlattices (T2SLs) and a gallium-free ("Ga-free") InAs/InAsSb (x = 0.39) absorber was characterized by photoluminescence (PL) and spectral response (SR) methods. Heterostructures were grown by molecular beam epitaxy (MBE) on a GaAs substrate (001) orientation.

Defect Analysis in a Long-Wave Infrared HgCdTe Auger-Suppressed Photodiode.

Deep defects in the long-wave infrared (LWIR) HgCdTe heterostructure photodiode were measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The n-P-π-N photodiode structure was grown by following the metal-organic chemical vapor deposition (MOCVD) technique on a GaAs substrate. DLTS has revealed two defects: one electron trap with an activation energy value of 252 meV below the conduction band edge, located in the low n-type-doped transient layer at the π-N interface, and a second hole trap with an activation energy value of 89 meV above the valence band edge, located in the π absorber.

Non-Equilibrium Long-Wave Infrared HgCdTe Photodiodes: How the Exclusion and Extraction Junctions Work Separately.

The cooling requirement for long-wave infrared detectors still creates significant limitations to their functionality. The phenomenon of minority-carrier exclusion and extraction in narrow-gap semiconductors has been intensively studied for over three decades and used to increase the operating temperatures of devices. Decreasing free carrier concentrations below equilibrium values by a stationary non-equilibrium depletion of the device absorber leads to a suppression of Auger generation.