Scaling of damage mechanism for additively manufactured alloys at very high cycle fatigue.

A comparative analysis of fracture mechanisms in high- and very high- cycle fatigue (HCF, VHCF) regimes was carried out based on the results of multifractal analysis of the fracture surfaces of additively manufactured 316L stainless steel samples. In terms of scale invariants, the morphology of fracture surfaces in HCF and VHCF regimes inside and outside the fine granular area is shown. The analysis demonstrated that chaotic patterns of relief formation prevail in the crack initiation zone of VHCF samples.

Investigation of Plasma-Electrolytic Processing on EDMed Austenitic Steels.

This study investigates the effect of electrolytic plasma processing on the degree of defective layer removal from a damaged layer obtained after manufacturing operations. Electrical discharge machining (EDM) is widely accepted in modern industries for product development. However, these products may have undesirable surface defects that may require secondary operations.

Effect of Sr Doping on Structural and Transport Properties of BiTe.

Search for doped superconducting topological insulators is of prime importance for new quantum technologies. We report on fabrication of Sr-doped Bi2Te3 single crystals. We found that Bridgman grown samples have -type conductivity in the low 1019 cm-3, high mobility of 4000 cm2V-1s-1, crystal structure independent on nominal dopant content, and no signs of superconductivity.

Characteristic Features of Ultrafine-Grained Ti-45 wt.% Nb Alloy under High Cycle Fatigue.

The paper presents the results of fatigue-testing ultrafine-grained and coarse-grained Ti-45 wt.% Nb alloy samples under very high cycle fatigue (gigacycle regime), with the stress ratio R = -1. The ultrafine-grained (UFG) structure in the investigated alloy was formed by the two-stage SPD method, which included multidirectional forging (abc-forging) and multipass rolling in grooved rollers, with further recrystallization annealing.

Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum.

In this paper, we show that electron states formed in topological insulators at the interfaces topological phase-trivial phase and topological phase-vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological HgCdTe films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film-trivial buffer/cap layer.