Effects of the Ar ions pre-amorphization of Si substrate on interface mixing of Fe/Si bilayers.

Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Ar ions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing.