Table-top source for x-ray absorption spectroscopy with photon energies up to 350 eV.

We present a table-top setup for x-ray absorption spectroscopy (XAS) based on high harmonic generation (HHG) in noble gases. Using sub-millijoule pump pulses at a central wavelength of 1550 nm, broadband HHG in the range of 70-350 eV was demonstrated. The HHG coherence lengths of several millimeters were achieved by reaching the nonadiabatic regime of harmonic generation.

Nonequilibrium Dynamics of Electron Emission from Cold and Hot Graphene under Proton Irradiation.

Characteristic properties of secondary electrons emitted from irradiated two-dimensional materials arise from multi-length and multi-time-scale relaxation processes that connect the initial nonequilibrium excited electron distribution with their eventual emission. To understand these processes, which are critical for using secondary electrons as high-resolution thermalization probes, we combine first-principles real-time electron dynamics with irradiation experiments. Our data for cold and hot proton-irradiated graphene show signatures of kinetic and potential emission and generally good agreement for electron yields between experiment and theory.

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors.

Black phosphorus (BP) field-effect transistors with ultrathin channels exhibit unipolar p-type electrical conduction over a wide range of temperatures and pressures. Herein, we study a device that exhibits mobility up to 100 cm V s and a memory window up to 1.3 μA.

Manipulation of the electrical and memory properties of MoS field-effect transistors by highly charged ion irradiation.

Field-effect transistors based on molybdenum disulfide (MoS) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or defects either in the MoS lattice or in the underlying substrate. We fabricated MoS field-effect transistors on SiO/Si substrates, irradiated these devices with Xe ions at a kinetic energy of 180 keV to deliberately introduce defects and studied the resulting changes of their electrical and hysteretic properties.

Evaluating strain and doping of Janus MoSSe from phonon mode shifts supported by DFT calculations.

With the study of Janus monolayer transition metal dichalcogenides, in which one of the two chalcogen layers is replaced by another type of chalcogen atom, research on two-dimensional materials is advancing into new areas. Yet only little is known about this new kind of material class, mainly due to the difficult synthesis. In this work, we synthesize MoSSe monolayers from exfoliated samples and compare their Raman signatures with density functional theory calculations of phonon modes that depend in a nontrivial way on doping and strain.