Publications by authors named "M N Hedhili"

The significant contact resistance at the metal-semiconductor interface is a well-documented issue for organic thin-film transistors (OTFTs) that hinders device and circuit performance. Here, this issue is tackled by developing three new thiol carbazole-based self-assembled monolayer (SAM) molecules, namely tBu-2SCz, 2SCz, and Br-2SCz, and utilizing them as carrier-selective injection interlayers. The SAMs alter the work function of gold electrodes by more than 1 eV, making them suitable for use in hole and electron-transporting OTFTs.

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  • A new reducing agent based on hydrosilanes (Si-H) allows for synthesis of high-quality, monodisperse InAs CQDs with tunable excitonic peaks, avoiding harmful compounds that cause surface oxidation.
  • These CQDs exhibit excellent optoelectronic properties, leading to photodetectors with low dark current, good quantum efficiency, and fast photoresponse times, while eliminating a major barrier related to (TMS)As usage
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The electrocatalytic synthesis of ammonia (NH) through the nitrogen reduction reaction (NRR) under ambient temperature and pressure is emerging as an alternative approach to the conventional Haber-Bosch process. However, it remains a significant challenge due to poor kinetics, low nitrogen (N) solubility in aqueous electrolytes, and the competing hydrogen evolution reaction (HER), which can significantly impact NH production rates and Faradaic efficiency (FE). Herein, a rationally designed boron-doped molybdenum sulfide (B-Mo-MoS) electrocatalyst is reported that effectively enhances N reduction to  NH with an onset potential of -0.

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Ultraflat metal foils are essential for semiconductor nanoelectronics applications and nanomaterial epitaxial growth. Numerous efforts have been devoted to metal surface engineering studies in the past decades. However, various challenges persist, including size limitations, polishing non-uniformities, and undesired contaminants.

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  • Shortwave infrared (SWIR) light emitters and detectors are important for various applications but currently depend on expensive semiconductors like InGaAs, which are hard to integrate with existing silicon technology.
  • Colloidal quantum dots (CQDs) represent a cheaper alternative but often contain harmful heavy metals, which limits their use.
  • The study presents a new method to create InAs/ZnSe core/shell quantum dots that improve performance in the SWIR range, with high efficiency and low dark current, successfully demonstrating their use in photodetectors.
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