This paper introduces the results of hydrolytic stability tests and radiation resistance tests of phosphate molybdates and phosphate tungstates NaZr(PO)(XO), X = Mo, W (0 ≤ x ≤ 0.5). The ceramics characterized by relatively high density (more than 97.
View Article and Find Full Text PDFThe influence of Mo interlayers on the microstructure of films and boundaries, and the reflective characteristics of Ru/Be multilayer mirrors (MLM) were studied by X-ray reflectometry and diffractometry, and secondary ion mass spectrometry (SIMS). An increase in the reflection coefficients of MLM at a wavelength of 11.4 nm to record values of R = 72.
View Article and Find Full Text PDFA new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gallium and oxygen) on the chemical composition of implanted layers is reported. The separation of gallium profiles in the elemental and oxidized states is shown, even in the absence of post-implantation annealing.
View Article and Find Full Text PDFPedestrian occurrences in images and videos must be accurately recognized in a number of applications that may improve the quality of human life. Radar can be used to identify pedestrians. When distinct portions of an object move in front of a radar, micro-Doppler signals are produced that may be utilized to identify the object.
View Article and Find Full Text PDFThe distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step.
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