Back to the future: breast surgery with tumescent local anesthesia (TLA)?

Purpose: Breast surgery is usually performed under general anesthesia. Tumescent local anesthesia (TLA) offers the possibility to anesthetize large areas with highly diluted local anesthetic.

Methods: In this paper, the implementation, and experiences with TLA in the field of breast surgery are discussed.

Repetition frequency tunability and stability of BH InAs/InP QD and InGaAsP/InP QW two-section mode-locked laser diodes.

Ultra-high repetition rate (UHRR) mode-locked laser diodes (MLLD) have shown promising results for applications based on optical sampling such as asynchronous optical sampling (ASOPS), optical sampling by repetition-rate tuning (OSBERT), and optical ranging. Important metrics to consider are the repetition frequency (RF) and the RF linewidth. Here, we compare two monolithically integrated MLLDs.

Group velocity dispersion in high-performance BH InAs/InP QD and InGaAsP/InP QW two-section passively mode-locked lasers.

High-performance buried heterostructure (BH) C-band InAs/InP quantum dot (QD) and L-band InGaAsP/InP quantum well (QW) two-section passively mode-locked lasers (MLLs) are investigated. From the irregularity of the longitudinal mode spacing in the comb spectra, we confirm that under stable passive mode locking, both devices have strong group velocity dispersion (GVD) and corresponding GVD-induced pulse width broadening. After compensation with anomalous dispersion fibers (SMF-28), short pulse trains with sub-ps pulse widths are achieved for both devices.

Photonic integrated circuit with sampled grating lasers fabricated on a generic foundry platform for broadband terahertz generation.

We demonstrate a monolithically integrated photonic integrated circuit (PIC) for terahertz spectroscopy with wide spectral bandwidth. The PIC includes two widely tunable sampled grating DBR (SG DBR) lasers, semiconductor optical amplifiers (SOAs), and passive components to combine signals. The SG DBR lasers cover 22 nm and 24 nm tuning range, respectively, with 4 nm overlap in the C band.

Hybrid external-cavity lasers (ECL) using photonic wire bonds as coupling elements.

Combining semiconductor optical amplifiers (SOA) on direct-bandgap III-V substrates with low-loss silicon or silicon-nitride photonic integrated circuits (PIC) has been key to chip-scale external-cavity lasers (ECL) that offer wideband tunability along with small optical linewidths. However, fabrication of such devices still relies on technologically demanding monolithic integration of heterogeneous material systems or requires costly high-precision package-level assembly, often based on active alignment, to achieve low-loss coupling between the SOA and the external feedback circuits. In this paper, we demonstrate a novel class of hybrid ECL that overcome these limitations by exploiting 3D-printed photonic wire bonds as intra-cavity coupling elements.