In this paper, we present modelling of spectroscopic ellipsometry data. The measured samples are thin films of copper oxides modified with the ion implantation method. The samples were prepared using reactive magnetron sputtering.
View Article and Find Full Text PDFCuprous oxide is a semiconductor with potential for use in photocatalysis, sensors, and photovoltaics. We used ion implantation to modify the properties of CuO oxide. Thin films of CuO were deposited with magnetron sputtering and implanted with low-energy Cr ions of different dosages.
View Article and Find Full Text PDFCupric oxide is a semiconductor with applications in sensors, solar cells, and solar thermal absorbers. To improve its properties, the oxide was doped with a metallic element. No studies were previously performed on Cr-doping using the ion implantation technique.
View Article and Find Full Text PDFWe present an experimental study of the longitudinal and transverse relaxation of ensembles of negatively charged nitrogen-vacancy (NV-) centers in a diamond monocrystal prepared by 1.8 MeV proton implantation. The focused proton beam was used to introduce vacancies at a 20 µµm depth layer.
View Article and Find Full Text PDF© LitMetric 2025. All rights reserved.