Synthesis and Modification of Boron Nitride nanotubes using ion implantation.

In this work, Chemical Vapour Deposition (CVD) has been used to synthesize boron nitride (BN) nanostructures, particularly nanotubes, and selectively introduce defects into the lattice of the synthesized BN nanostructures through ion implantation. Scanning electron microscopy (SEM) images show clear evidence of BN nanostructures and BN nanotubes (BNNTs), with the latter appearing as long, thin structures with diameters ranging from ⁓30-80 nm. Raman analysis show an E mode of vibration assigned to hexagonal BN (h-BN) at 1366 cm after ion implantation, with increased intensity.

Semi-empirical parameterization of HI/p L-shell X-ray production cross section ratios in Bi for Heavy Ion PIXE.

Quantitative analysis of materials from Heavy Ion PIXE spectra remains impeded by the lack of reliable X-ray production cross section (XPCS) data. Although efforts at experimental Heavy Ion induced XPCS measurements still continue, Multiple Ionisation (MI) effects, which are not fully described by theory, render simulations of heavy ion PIXE data unreliable for large Z/Z collisions, especially at low energies. This is also exacerbated by the random selection of projectile-target combinations for measured and reported experimental data available to validate theory.

Role of Boron in Assisting the Super-Enhancement of Emissions from Carbon-Implanted Silicon.

The super enhancement of silicon band edge luminescence when co-implanted with boron and carbon is reported. The role of boron in the band edge emissions in silicon was investigated by deliberately introducing defects into the lattice structures. We aimed to increase the light emission intensity from silicon by boron implantation, leading to the formation of dislocation loops between the lattice structures.

Measurement of L-shell X-ray production cross sections in Y, Gd and Bi due to 0.3 MeV/u - 1.0 MeV/u C ions.

Experimental heavy ion induced X-ray production cross sections in matter continue to be of importance for both fundamental ion-atom collision studies as well as practical applications such as in nuclear analytical techniques. This work presents results of L-shell X-ray production cross section measurements in Y, Gd and Bi due to 4 MeV-12 MeV C projectile ions. Experimental data are compared with theoretical calculations based on the ECPSSR, ECPSSR + EC and ECPSSR-UA models.

Minimum lattice thermal conductivity of InSbTe by surface Brillouin scattering.

Phase-change materials are chalcogenide alloys used for nonvolatile memory applications due to their rapid and reversible structural transformation. is a promising candidate that exhibits transitions dependent on thermal conductivity. The minimum lattice thermal conductivity of amorphous is investigated by surface acoustic propagation.