Transport Simulation of Graphene Devices with a Generic Potential in the Presence of an Orthogonal Magnetic Field.

The effect of an orthogonal magnetic field is introduced into a numerical simulator, based on the solution of the Dirac equation in the reciprocal space, for the study of transport in graphene devices consisting of armchair ribbons with a generic potential. Different approaches are proposed to reach this aim. Their efficiency and range of applicability are compared, with particular focus on the requirements in terms of model setup and on the possible numerical issues that may arise.

Effects of A Magnetic Field on the Transport and Noise Properties of a Graphene Ribbon with Antidots.

We perform a numerical simulation of the effects of an orthogonal magnetic field on charge transport and shot noise in an armchair graphene ribbon with a lattice of antidots. This study relies on our envelope-function based code, in which the presence of antidots is simulated through a nonzero mass term and the magnetic field is introduced with a proper choice of gauge for the vector potential. We observe that by increasing the magnetic field, the energy gap present with no magnetic field progressively disappears, together with features related to commensurability and quantum effects.

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper.

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS field-effect transistors on paper fabricated with a "channel array" approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication.

Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization.

We report room temperature Hall mobility measurements, low temperature magnetoresistance analysis and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO/Si substrates. We found that thermal annealing in vacuum at 450 °C is a necessary step in order to stabilize the Hall voltage across the devices, allowing their electrical characterization. The printed films present a minimum sheet resistance of 23.

All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits.

A well-defined insulating layer is of primary importance in the fabrication of passive ( e.g., capacitors) and active ( e.