1.4% External Quantum Efficiency 988 nm Light Emitting Diode Based on Tin-Lead Halide Perovskite.

In recent years, metal halide perovskite-based light-emitting diodes (LEDs) have garnered significant attention as they display high quantum efficiency, good spectral tunability, and are expected to have low processing costs. When the peak emission wavelength is beyond 900 nm the interest is even higher because of the critical importance of this wavelength for biomedical imaging, night vision, and sensing. However, many challenges persist in fabricating these high-performance NIR LEDs, particularly for wavelengths above 950 nm, which appear to be limited by low radiance and poor stability.

Mechanism of Hot-Carrier Photoluminescence in Sn-Based Perovskites.

Metal halide perovskites have shown exceptionally slow hot-carrier cooling, which has been attributed to various physical mechanisms without reaching a consensus. Here, experiment and theory are combined to unveil the carrier cooling process in formamidinium (FA) and caesium (Cs) tin triiodide thin films. Through impulsive vibrational spectroscopy and molecular dynamics, much shorter phonon dephasing times of the hybrid perovskite, which accounts for the larger blueshift in the photoluminescence seen at high excitation density for FASnI compared to CsSnI is reported.

Air-Stable Thin Films of Tin Halide Perovskite Nanocrystals by Polymers and AlO Encapsulation.

Tin halide perovskites are promising for optoelectronics, although their sensitivity to ambient conditions due to Sn(II) oxidation presents a challenge. Encapsulation techniques can mitigate degradation and facilitate advanced studies of the intrinsic properties. To study and improve the ambient stability of CsSnBr and CsSnI nanocrystal (NC) thin films, we explored various encapsulation methods: organic, inorganic, and hybrid.