Textured Manganite Films Anywhere.

New paradigms are required in microelectronics when the transistor is in its downscaling limit and integration of materials presenting functional properties not available in classical silicon is one of the promising alternatives. Here, we demonstrate the possibility to grow LaSrMnO (LSMO) functional materials on amorphous substrates with properties close to films grown on single-crystalline substrates using a two-dimensional seed layer. X-ray diffraction and electron backscatter diffraction mapping demonstrate that the CaNbO nanosheet (NS) layer induces epitaxial stabilization of LSMO films with a strong out-of-plane (001) texture, whereas the growth of LSMO films on uncoated glass substrates exhibits a nontextured polycrystalline phase.

In Situ Synchrotron Powder Diffraction Study of Cd Intercalation into Chevrel Phases: Crystal Structure and Kinetic Effect.

Chevrel phases are molybdenum chalcogenides of formula M MoX (where M is a cation and X is a chalcogen) that present a complex and captivating intercalation chemistry that has drawn the interest of the solid-state chemistry community since their discovery. This property has a huge potential for applied science and device development for energy storage and pollutant removal and detection, but a deeper knowledge of the intercalation processes and chemistry is still necessary. In the present work, the intercalation of Cd in aqueous solution has been studied, taking advantage of the complementarity of electrochemical characterization and synchrotron powder diffraction acquired during an in situ combined experiment.

How a dc Electric Field Drives Mott Insulators Out of Equilibrium.

Out of equilibrium phenomena are a major issue of modern physics. In particular, correlated materials such as Mott insulators experience fascinating long-lived exotic states under a strong electric field. Yet, the origin of their destabilization by the electric field is not elucidated.

A Twofold Approach in Loss Reduction of KTaNbO Ferroelectric Layers for Low-Loss Tunable Devices at Microwaves.

Ferroelectric oxide films are attractive to design and fabricate reconfigurable and miniaturized planar devices operating at microwaves due to the large electric field dependence of their dielectric permittivity. In particular, KTaNbO (KTN) ferroelectric material presents a high tunability under moderate dc bias electric field. However, its intrinsic dielectric loss strongly contributes to the global loss of the related devices and limits their application areas at microwaves.