Nanoscale View of Alignment and Domain Growth in a Hexagonal Columnar Liquid Crystal.

Highly ordered liquid crystalline (LC) phases have important potential for organic electronics. We studied the molecular alignment and domain structure in a columnar LC thin film with nanometer resolution during in situ heating using four-dimensional scanning transmission electron microscopy (4D STEM). The initial disordered vapor-deposited LC glass thin film rapidly ordered at its glass transition temperature into a hexagonal columnar phase with small (<10 nm), well-aligned, planar domains (columns oriented parallel to the surface).

High Density Two-Component Glasses of Organic Semiconductors Prepared by Physical Vapor Deposition.

Physical vapor deposition (PVD) is widely utilized for the production of organic semiconductor devices due to its ability to form thin layers with exceptional properties. Although the layers in the device usually consist of two or more components, there is limited understanding about the fundamental characteristics of such multicomponent vapor-deposited glasses. Here, spectroscopic ellipsometry was employed to characterize the densities, thermal stabilities, and optical properties of covapor deposited NPD and TPD glasses across the entire range of composition.

Structural Relaxation Time of a Polymer Glass during Deformation.

In order to determine the structural relaxation time of a polymer glass during deformation, a strain rate switching experiment is performed in the steady-state plastic flow regime. A lightly cross-linked poly(methylmethacrylate) glass was utilized and, simultaneously, the segmental motion in the glass was quantified using an optical probe reorientation method. After the strain rate switch, a nonmonotonic stress response is observed, consistent with previous work.

Anatomy of the dielectric behavior of methyl-m-toluate glasses during and after vapor deposition.

Glassy films of methyl-m-toluate have been vapor deposited onto a substrate equipped with interdigitated electrodes, facilitating in situ dielectric relaxation measurements during and after deposition. Samples of 200 nm thickness have been deposited at rates of 0.1 nm/s at a variety of deposition temperatures between 40 K and Tg = 170 K.