Role of Point Defects and Ion Intercalation in Two-Dimensional Multilayer Transition Metal Dichalcogenide Memristors.

Two-dimensional materials, in particular transition metal dichalcogenides (TMDs), have attracted a nascent interest in the implementation of memristive architectures. In addition to being functionally similar to synapses, their nanoscale footprint promises to achieve the high density of a biological neural network in the context of neuromorphic computing. However, in order to advance from the current exploratory phase and reach reliable and sound memristive performances, an understanding of the underlying physical mechanisms in TMD memristors seems imperative.

A Flexible Laser-Induced Graphene Memristor with Volatile Switching for Neuromorphic Applications.

Two-dimensional graphene and graphene-based materials are attracting increasing interest in neuromorphic computing applications by the implementation of memristive architectures that enable the closest solid-state equivalent to biological synapses and neurons. However, the state-of-the-art fabrication methodology involves routine use of high-temperature processes and multistepped chemical synthesis, often on a rigid substrate constraining the experimental exploration in the field to high-tech facilities. Here, we demonstrate the use of a one-step process using a commercial laser to fabricate laser-induced graphene (LIG) memristors directly on a flexible polyimide substrate.

Reconfigurable frequency multipliers based on graphene field-effect transistors.

Run-time device-level reconfigurability has the potential to boost the performance and functionality of numerous circuits beyond the limits imposed by the integration density. The key ingredient for the implementation of reconfigurable electronics lies in ambipolarity, which is easily accessible in a substantial number of two-dimensional materials, either by contact engineering or architecture device-level design. In this work, we showcase graphene as an optimal solution to implement high-frequency reconfigurable electronics.

Insights into the Mechanical and Electrical Properties of a Metal-Phosphorene Interface: An Ab Initio Study with a Wide Range of Metals.

Finding a metal contact with higher interface adhesion and lower contact resistivity is a major challenge in realizing 2D material-based field-effect transistors. The commonly used metals in the semiconductor industry have different interface chemistry with phosphorene. Although phosphorene FETs have been fabricated with gold, titanium, and palladium contacts, there are other metals with a better interface.