Energy Band Alignment by Solution-Processed Aluminum Doping Strategy toward Record Efficiency in Pulsed Laser-Deposited Kesterite Thin-Film Solar Cell.

Kesterite-based CuZnSnS (CZTS) thin-film photovoltaics involve a serious interfacial dilemma, leading to severe recombination of carriers and insufficient band alignment at the CZTS/CdS heterojunction. Herein, an interface modification scheme by aluminum doping is introduced for CZTS/CdS via a spin coating method combined with heat treatment. The thermal annealing of the kesterite/CdS junction drives the migration of doped Al from CdS to the absorber, achieving an effective ion substitution and interface passivation.

Structure, Morphology, and Photoelectric Performances of Te-SbSe Thin Film Prepared via Magnetron Sputtering.

Antimony selenide (SbSe) has been widely investigated as a promising absorber material for photovoltaic devices. However, low open-circuit voltage (V) limits the power conversion efficiency (PCE) of SbSe-based cells, largely due to the low-charge carrier density. Herein, high-quality n-type (Tellurium) Te-doped SbSe thin films were successfully prepared using a homemade target via magnetron sputtering.

Fundamental Physical Characterization of SbSe-Based Quasi-Homojunction Thin Film Solar Cells.

A new type of solar cell based on Cu-doped (p-type) and I-doped (n-type) SbSe has been designed and fabricated using magnetron sputtering with two different thicknesses of absorber. The overall objective is for better understanding the charge recombination mechanism, especially at the interface region. The investigation has been specifically performed using IMPS (intensity modulated photocurrent spectroscopy), IMVS (intensity modulated photovoltage spectroscopy), and diode characterizations.

Global sensitivity analysis of bandpass and antireflection coating manufacturing by numerical space filling designs.

We present the effectiveness of global sensitivity analyses of optical coatings manufacturing to assess the robustness of filters by computer experiments. The most critical interactions of layers are determined for a 29 quarter-wave layer bandpass filter and for an antireflection coating with eight non-quarter-wave layers. Two monitoring techniques with the associated production performances are considered, and their influence on the interactions classification is discussed.