Contact gating at GHz frequency in graphene.

The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the contact edge.

Anodic bonded 2D semiconductors: from synthesis to device fabrication.

Two-dimensional semiconductors are increasingly relevant for emergent applications and devices, notably for hybrid heterostructures with graphene. We fabricate few-layer, large-area (a few tens of microns across) samples of the III-VI semiconductors GaS, GaSe and InSe using the anodic bonding method and characterize them by simultaneous use of optical microscopy, atomic force microscopy and Raman spectroscopy. Two-terminal devices with a gate are constructed to show the feasibility of applications based on these.

High quality 2D crystals made by anodic bonding: a general technique for layered materials.

Anodic bonding of nanolayers is an easy technique based on a simple apparatus, which has already proven successful in application in the fabrication of high quality graphene. Here we demonstrate its extension to the fabrication of high quality nanolayers from several layered materials. The strengths of this technique are its high throughput rate and ease of application.