The Development and Atomic Structure of Zinc Oxide Crystals Grown within Polymers from Vapor Phase Precursors.

Sequential infiltration synthesis (SIS), also known as vapor phase infiltration (VPI), is a quickly expanding technique that allows growth of inorganic materials within polymers from vapor phase precursors. With an increasing materials library, which encompasses numerous organometallic precursors and polymer chemistries, and an expanding application space, the importance of understanding the mechanisms that govern SIS growth is ever increasing. In this work, we studied the growth of polycrystalline ZnO clusters and particles in three representative polymers: poly(methyl methacrylate), SU-8, and polymethacrolein using vapor phase diethyl zinc and water.

Mechanical Behavior of Hybrid Thin Films Fabricated by Sequential Infiltration Synthesis in Water-Rich Environment.

Sequential infiltration synthesis (SIS) is an emerging technique for fabricating hybrid organic-inorganic materials with nanoscale precision and controlled properties. Central to SIS implementation in applications such as membranes, sensors, and functional coatings is the mechanical properties of hybrid materials in water-rich environments. This work studies the nanocomposite morphology and its effect on the mechanical behavior of SIS-based hybrid thin films of AlO-PMMA under aqueous environments.

Bio-assisted synthesis of bimetallic nanoparticles featuring antibacterial and photothermal properties for the removal of biofilms.

Biofilms are responsible for about considerable amounts of cases of bacterial infections in humans. They are considered a major threat to transplant and chronic wounds patients due to their highly resistant nature against antibacterial materials and due to the limited types of techniques that can be applied to remove them. Here we demonstrate a successful in-situ bio-assisted synthesis of dual functionality nanoparticles composed of Silver and Gold.

Engineering Individual Oxygen Vacancies: Domain-Wall Conductivity and Controllable Topological Solitons.

Nanoscale devices that utilize oxygen vacancies in two-dimensional metal-oxide structures garner much attention due to conductive, magnetic, and even superconductive functionalities they exhibit. Ferroelectric domain walls have been a prominent recent example because they serve as a hub for topological defects and hence are attractive for next-generation data technologies. However, owing to the light weight of oxygen atoms and localized effects of their vacancies, the atomic-scale electrical and mechanical influence of individual oxygen vacancies has remained elusive.

Formation and manipulation of domain walls with 2 nm domain periodicity in BaTiO without contact electrodes.

Interfaces at the two-dimensional limit in oxide materials exhibit a wide span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can be moved deterministically with external voltage, while they remain at place after voltage removal, paving the way to novel neuromorphic and low-power data-processing technologies. Ferroic domains arise to release strain, which depends on material thickness, following Kittel's scaling law.