[Experience of transaxillary endoscopic thyroid surgery].

Aim: To compare the outcomes after open and endoscopic interventions on thyroid gland.

Material And Methods: We have retrospectively analyzed 158 interventions on thyroid gland for the period March 2014 - January 2016. Herewith, 21 interventions were performed endoscopically with transaxillary removal of specimen.

In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts.

The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (∼10(-2) Ω · cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As.

Crystallization of amorphous Si nanoclusters in SiO(x) films using femtosecond laser pulse annealings.

The SiO(x) films of various stoichiometries deposited on Si substrates with the use of the co-sputtering from two separate Si and SiO2 targets were annealed by femtosecond laser pulses. Femtosecond laser treatments were applied for crystallization of amorphous silicon nanoclusters in the silicon-rich oxide films. The treatments were carried out with the use of Ti-Sapphire laser with wavelength 800 nm and pulse duration about 30 fs.

Crystallization of Ti33Cu67 metallic glass under high-current density electrical pulses.

We have studied the phase and structure evolution of the Ti33Cu67 amorphous alloy subjected to electrical pulses of high current density. By varying the pulse parameters, different stages of crystallization could be observed in the samples. Partial polymorphic nanocrystallization resulting in the formation of 5- to 8-nm crystallites of the TiCu2 intermetallic in the residual amorphous matrix occurred when the maximum current density reached 9.