Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO Nanowire Arrays on Nanoimprinted Si Substrates.

In the present article, the position-controlled and catalytic-free synthesis of vanadium dioxide (VO) nanowires (NWs) grown by the chemical vapor deposition (CVD) on nanoimprinted silicon substrates in the form of nanopillar arrays was analyzed. The NW growth on silicon nanopillars with different cross-sectional areas was studied, and it has been shown that the NWs' height decreases with an increase in their cross-sectional area. The X-ray diffraction technique, scanning electron microscopy, and X-ray photoelectron spectroscopy showed the high quality of the grown VO NWs.

A new approach to the fabrication of VO nanoswitches with ultra-low energy consumption.

A new approach for the formation of free-standing vertical resistive nanoswitches based on VO2 nanocrystals (NCs) with embedded conductive nanosharp Si tips is demonstrated in the present article. This approach consists in the chemical vapor deposition synthesis of VO2 NCs on the apices of sharp conductive nanotips formed on a Si substrate by the standard methods of planar silicon technology. The amplification of the electric field and current density at the tip apex inside a high-quality VO2 NC leads to a record-breaking reduction of switching voltage (by a factor of 20-70) in comparison with conventional geometry devices with planar contacts.