Reflectance reduction of InP wafers after high-temperature annealing.

Broadband reduction of light reflection from the surface of InP wafers after high-temperature annealing in air has been observed. In the transparency region of the material, the reflection drop is accompanied by increasing transmission of light through the wafer. The spectral position of a deep minimum of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in a wide spectral range from ultraviolet to infrared.

Correlation effects in sequential energy branching: an exactly solvable model of Fano statistics.

Correlation effects in the fluctuation of the number of particles in the process of energy branching by sequential impact ionizations are studied using an exactly soluble model of random parking on a line. The Fano factor F calculated in an uncorrelated final-state "shot-glass" model does not give an accurate answer even with the exact gap-distribution statistics. Allowing for the nearest-neighbor correlation effects gives a correction to F that brings F very close to its exact value.

Fluctuations of the partial filling factors in competitive random sequential adsorption from binary mixtures.

Competitive random sequential adsorption on a line from a binary mix of incident particles is studied using both an analytic recursive approach and Monte Carlo simulations. We find a strong correlation between the small and the large particle distributions so that while both partial contributions to the fill factor fluctuate widely, the variance of the total fill factor remains relatively small. The variances of partial contributions themselves are quite different between the smaller and the larger particles, with the larger particle distribution being more correlated.

Random sequential adsorption of shrinking or expanding particles.

We present a model of one-dimensional irreversible adsorption in which particles once adsorbed immediately shrink to a smaller size or expand to a larger size. Exact solutions for the fill factor and the particle number variance as a function of the size change are obtained. Results are compared with approximate analytical solutions.

Excitation-emission fluorimeter based on linear interference filters.

We describe the design, properties, and performance of an excitation-emission (EE) fluorimeter that enables spectral characterization of an object simultaneously with respect to both its excitation and its emission properties. Such devices require two wavelength-selecting elements, one in the optical path of the excitation broadband light to obtain tunable excitation and the other to analyze the resulting fluorescence. Existing EE instruments are usually implemented with two monochromators.

Dynamic range of fluorescence detection and base-calling accuracy in DNA sequencer based on single-photon counting.

Recently, we developed a family of high-performance automated capillary DNA sequencing instruments based on a single-photon detection of fluorescently labeled DNA fragments. Our machines employ digital and broadband techniques, essential for achieving superior instrument sensitivity and dynamic range. In the present paper, we discuss limitations of the instrument's performance caused by the nonlinearity of single-photon detectors as well as methods for nonlinearity compensation which increase the detection dynamic range and base-calling accuracy.

Formation of a resistive region at the anode end in DNA capillary electrophoresis.

We have studied the formation of a resistive region in the capillary during DNA separation. This effect is caused by an unequal change in the mobilities of cations and anions at the interface between the running buffer solution and the capillary. We studied the motion of the resistive region boundary by sequential removal of portions of the affected capillary end.

Hot electrons and curves of constant gain in long wavelength quantum well lasers.

In long wavelength quantum well lasers the effective electron temperature (T(e)) is often a strong function of the pump current and hence the T(e) correlates with the carrier concentration n in the active region. On the other hand, the material gain g in the active layer depends on both variables, g=g(n,T(e) ). We discuss a convenient way of analyzing this situation, based on considering the contours of constant gain g on the surface g(n,T(e) ).