Publications by authors named "Luna-Lopez J"

In this study, a simulation of the elementary chemical reactions during SiO film growth in a hot filament chemical vapor deposition (HFCVD) reactor was carried out using a 2D model. For the 2D simulation, the continuity, momentum, heat, and diffusion equations were solved numerically by the software COMSOL Multiphysics based on the finite element method. The model allowed for the simulation of the key parameters of the HFCVD reactor.

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Inverted perovskite solar cells (PSCs) have gained much attention due to their low hysteresis effect, easy fabrication, and good stability. In this research, an inverted perovskite solar cell ITO/PEDOT:PSS/CHNHPbI/PCBM/Ag structure was simulated and optimized using SCAPS-1D version 3.3.

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In this work, we report how manganese phthalocyanine (MnPc) films obtained using the ultrasonic spray-pyrolysis technique at 40 °C deposited on glass substrate subjected to thermal annealing at 100 °C and 120 °C. The MnPc films were characterized using UV/Vis spectroscopy, Raman spectroscopy, X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM). The absorption spectra of the MnPc films were studied in a wavelength range from 200 to 850 nm, where the characteristic bands of a metallic phthalocyanine known as B and Q bands were observed in this range of the spectrum.

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In this work, hybrid structures formed by nanostructured layers, which contain materials, such as porous silicon (PSi), carbon nanotubes (CNTs), graphene oxide (GO), and silicon-rich oxide (SRO), were studied. The PSi layers were obtained by electrochemical etching over which CNTs and GO were deposited by spin coating. In addition, SRO layers, in which silicon nanocrystals are embedded, were obtained by hot filament chemical vapor deposition (HFCVD) technique.

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MIS-type structures composed of silicon-rich oxide (SRO), thin films deposited by hot filament chemical vapor deposition (HFCVD), show interesting I-V and I-t properties under white light illumination and a response as photodetectors. From electrical measurements, it was found that at a reverse bias of -4 V, the illumination current increased by up to three orders of magnitude relative to the dark current, which was about 82 nA, while the photogenerated current reached a value of 25 μA. The reported MIS structure with SRO as the dielectric layer exhibited a hopping conduction mechanism, and an ohmic conduction mechanism was found with low voltage.

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In this paper, a planar heterojunction simulation of Sn-based iodide perovskite solar cell () is proposed. The solar cell structure consists of a Fluorine-doped tin oxide (FTO) substrate on which titanium oxide (TiO) is placed; this material will act as an electron transporting layer (ETL); then, we have the tin perovskite CHNHSnI (MASnI) which is the absorber layer and next a copper zinc and tin sulfide (CZTS) that will have the function of a hole transporting layer (HTL). This material is used due to its simple synthesis process and band tuning, in addition to presenting good electrical properties and stability; it is also a low-cost and non-toxic inorganic material.

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Polymethylmethacrylate (PMMA) microspheres were synthesized by surfactant-free emulsion polymerization. These microspheres were used to obtain opals by the self-assembly method. Monomer and initiator quantities were varied systematically to monitor the size of PMMA microspheres.

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In the present work, non-stoichiometric silicon oxide films (SiO) deposited using a hot filament chemical vapor deposition technique at short time and simple parameters of depositions are reported. This is motivated by the numerous potential applications of SiO films in areas such as optoelectronics. SiO films were characterized with different spectroscopic techniques.

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In this article, physical characteristics of porous silicon (PS) obtained by electro chemical etching using HAuCl4 in the electrolyte are described. The morphological and optical features of PS decorated with gold-nanoparticles (AuNPs) were analyzed in function of the chemical etching time. The insertion of AuNPs inside the PS were performed simultaneously with the formation of the porous silicon layer.

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The search for novel materials and the development of improved processes for water purification have attracted the interest of researchers worldwide and the use of titanium dioxide in photocatalytic processes for the degradation of organic pollutants contained in water has been one of the benchmarks. Compared to crystalline titanium dioxide (cTiO₂), the amorphous material has the advantages of having a higher adsorption capacity and being easier to dope with metal and non-metal elements. In this work, we take advantage of these two features to improve its photocatalytic properties in the degradation of Rhodamine B.

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In this paper, we study the structural, optical and electro-optical properties of silicon rich oxide (SRO) films, with 6.2 (SRO₃₀) and 7.3 at.

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Unlabelled: In this work, non-stoichiometric silicon oxide (SiO x ) films and (SiO x /SiO y ) junctions, as-grown and after further annealing, are characterized by different techniques. The SiO x films and (SiO x /SiO y ) junctions are obtained by hot filament chemical vapor deposition technique in the range of temperatures from 900°C to 1,150°C. Transmittance spectra of the SiO x films showed a wavelength shift of the absorption edge thus indicating an increase in the optical energy band gap, when the growth temperature decreases; a similar behavior is observed in the (SiO x /SiO y ) structures, which in turn indicates a decrease in the Si excess, as Fourier transform infrared spectroscopy (FTIR) reveals, so that, the film and junction composition changes with the growth temperature.

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Unlabelled: In this work, we have obtained colloidal solutions of Si nanocrystals (Si-ncs), starting from free-standing porous silicon (PSi) layers. PSi layers were synthesized using a two-electrode Teflon electrochemical cell; the etching solution contained hydrogen peroxide 30%, hydrofluoric acid 40% (HF), and methanol. The anodizing current density was varied to 250 mA cm(-2), 1 A cm(-2), and 1.

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In systems in atomic scale and nanoscale such as clusters or agglomerates constituted by particles from a few to less than 100 atoms, quantum confinement effects are very important. Their optical and electronic properties are often dependent on the size of the systems and the way in which the atoms in these clusters are bonded. Generally, these nanostructures display optical and electronic properties significantly different to those found in corresponding bulk materials.

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Lead selenide nanoparticles (PbSe NPs) have been obtained through an easy and low cost route using colloidal synthesis in aqueous solution. The synthesis was carried out at room temperature using Extran (Na₅P₃O₁₀, NaOH and H₂O) as surfactant. Hydrochloric acid (HCl) was used to eliminate the generated by-products.

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Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 degrees C.

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The electrical properties of silicon-rich oxide (SRO) films in metal-oxide-semiconductor-like structures were analysed by current versus voltage (I-V) and capacitance versus voltage (C-V) techniques. SRO films were thermally annealed to activate the agglomeration of the silicon excess in the form of nanoparticles (Si-nps). High current was observed at low negative and positive voltages, and then at a certain voltage (V(drop)), the current dropped to a low conduction state until a high electric field again activated a high conduction state.

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Silicon nanoparticles (Si-nps) embedded in silicon oxide matrix were created using silicon-rich oxide (SRO) films deposited by low pressure chemical vapour deposition (LPCVD) followed by a thermal annealing at 1100 °C. The electrical properties were studied using metal-oxide-semiconductor (MOS) structures with the SRO films as the active layers. Capacitance versus voltage (C-V) exhibited downward and upward peaks in the accumulation region related to charge trapping and de-trapping effects of Si-nps, respectively.

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