Spin-Enhanced Self-Powered Light Helicity Detecting Based on Vertical WSe-CrI Heterojunction.

Two-dimensional (2D) magnetic semiconductors offer an intriguing platform for investigating magneto-optoelectronic properties and hold immense potential in developing prospective devices when they are combined with valley electronic materials like 2D transition-metal dichalcogenides. Herein, we report various magneto-optoelectronic response features of the vertical hBN-FLG-CrI-WSe-FLG-hBN van der Waals heterostructure. Through a sensible layout and exquisite manipulation, an hBN-FLG-CrI-FLG-hBN heterostructure was also fabricated on identical CrI and FLGs for better comparison.

P/N-Type Conversion of 2D MoTe Controlled by Top Gate Engineering for Logic Circuits.

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration.

Nanoscale Channel Length MoS Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes.

Two-dimensional transition metal dichalcogenides (TMDCs) have natural advantages in overcoming the short-channel effect in field-effect transistors (FETs) and in fabricating three-dimensional FETs, which benefit in increasing device density. However, so far, most reported works related to MoS FETs with a sub-100 nm channel employ mechanically exfoliated materials and all of the works involve electron beam lithography (EBL), which may limit their application in fabricating wafer-scale device arrays as demanded in integrated circuits (ICs). In this work, MoS FET arrays with a side-wall source and drain electrodes vertically distributed are designed and fabricated.

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown n-MoS and p-MoTe.

In this work, monolithic three-dimensional complementary metal oxide semiconductor (CMOS) inverter array has been fabricated, based on large-scale n-MoS and p-MoTe grown by the chemical vapor deposition method. In the CMOS device, the n- and p-channel field-effect transistors (FETs) stack vertically and share the same gate electrode. High k HfO is used as the gate dielectric.

Room-Temperature Ferroelectricity in 1T^{'}-ReS_{2} Multilayers.

van der Waals materials possess an innate layer degree of freedom and thus are excellent candidates for exploring emergent two-dimensional ferroelectricity induced by interlayer translation. However, despite being theoretically predicted, experimental realization of this type of ferroelectricity is scarce at the current stage. Here, we demonstrate robust sliding ferroelectricity in semiconducting 1T^{'}-ReS_{2} multilayers via a combined study of theory and experiment.

Low-power-consumption CMOS inverter array based on CVD-grown -MoTe and -MoS.

Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reported TMDCs-based CMOS inverters is not satisfactory.

Light helicity detector based on 2D magnetic semiconductor CrI.

Two-dimensional magnetic semiconductors provide a platform for studying physical phenomena at atomically thin limit, and promise magneto-optoelectronic devices application. Here, we report light helicity detectors based on graphene-CrI-graphene vdW heterostructures. We investigate the circularly polarized light excited current and reflective magnetic circular dichroism (RMCD) under various magnetic fields in both monolayer and multilayer CrI devices.

Imaging and Controlling Photonic Modes in Perovskite Microcavities.

Perovskite microcavities have excellent photophysical properties for integrated optoelectronic devices, such as nanolasers. Imaging and controlling the photonic modes within the cavity are fundamentally important to understand and develop applications. Here, photoemission electron microscopy (PEEM) is used to image the photonic modes within optical microcavities with a nanometer-scale spatial resolution.

Mapping Trap Dynamics in a CsPbBr Single-Crystal Microplate by Ultrafast Photoemission Electron Microscopy.

For versatile lead-halide perovskite materials, their trap states, both in the bulk and at the surface, significantly influence optoelectronic behaviors and the performance of the materials and devices. Direct observation of the trap dynamics at the nanoscale is necessary to understand and improve the device design. In this report, we combined the femtosecond pump-probe technique and photoemission electron microscopy (PEEM) to investigate the trap states of an inorganic perovskite CsPbBr single-crystal microplate with spatial-temporal-energetic resolving capabilities.

Manipulating the Raman scattering rotation magnetic field in an MoS monolayer.

Magneto-optical effects, which originate from the interactions between light and magnetism, have provided an important way to characterize magnetic materials and hosted abundant applications, such as light modulators, magnetic field sensors, and high-density data storage. However, such effects are too weak to be detected in non-magnetic materials due to the absence of spin degree of freedom. Here, we demonstrated that applying a perpendicular magnetic field can produce a colossal Raman scattering rotation in non-magnetic MoS, for A-mode representing the out-of-plane breathing vibration.

Atomic-Precision Repair of a Few-Layer 2H-MoTe Thin Film by Phase Transition and Recrystallization Induced by a Heterophase Interface.

2D semiconductors have emerged as promising candidates for post-silicon nanoelectronics, owing to their unique properties and atomic thickness. However, in the handling of 2D material, various forms of macroscopic damage, such as cracks, wrinkles, and scratches, etc., are usually introduced, which cause adverse effects on the material properties and device performance.

Waterproof Cesium Lead Bromide Perovskite Lasers and Their Applications in Solution.

The many advantageous optoelectronic properties of lead halide perovskites have made them promising materials in both solar cells and light source applications. However, lead halide perovskites are soluble in polar solvents, which hinders their practical applications. Thus, the effective protection of perovskite against polar solvents is of great significance.

p-MoS/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices.

A library of two-dimensional (2D) semiconductors with different band gaps offers the construction of van der Waals (vdWs) heterostructures with different band alignments, providing a new platform for developing high-performance optoelectronic devices. Here, we demonstrate all-2D optoelectronic devices based on type-II p-MoS/n-InSe vdWs heterojunctions operating at the near infrared (NIR) wavelength range. The p-n heterojunction diode exhibits a rectification ratio of ∼10 at = ±2 V and a turn-on voltage of ∼0.

Single-nanowire spectrometers.

Spectrometers with ever-smaller footprints are sought after for a wide range of applications in which minimized size and weight are paramount, including emerging in situ characterization techniques. We report on an ultracompact microspectrometer design based on a single compositionally engineered nanowire. This platform is independent of the complex optical components or cavities that tend to constrain further miniaturization of current systems.

Scaling-up Atomically Thin Coplanar Semiconductor-Metal Circuitry via Phase Engineered Chemical Assembly.

Two-dimensional (2D) layered semiconductors, with their ultimate atomic thickness, have shown promise to scale down transistors for modern integrated circuitry. However, the electrical contacts that connect these materials with external bulky metals are usually unsatisfactory, which limits the transistor performance. Recently, contacting 2D semiconductors using coplanar 2D conductors has shown promise in reducing the problematic high contact resistance.

Nanoscale Refractive Index Sensors with High Figures of Merit Optical Slot Antennas.

Nanoscale refractive index (RI) sensors based on a single nanorod or nanoantenna typically suffer from a low figure of merit (FOM) due to the large full width at half-maximum of the plasmonic dipole resonance. Here, we demonstrate nanosensors with a high FOM and a sensing volume that is much smaller than λ using slot antennas. Two configurations, one based on a bowtie slot antenna (BSA) and one based on a slot antenna pair (SAP), are proposed.

Two-dimensional ferromagnetism and driven ferroelectricity in van der Waals CuCrPS.

Multiferroic materials have the potential to be applied in novel magnetoelectric devices, for example, high-density non-volatile storage devices. During the last decades, research on multiferroic materials was focused on three-dimensional (3D) materials. However, 3D materials suffer from dangling bonds and quantum tunneling in nano-scale thin films.

Millimeter-Scale Single-Crystalline Semiconducting MoTe via Solid-to-Solid Phase Transformation.

Among the Mo- and W-based two-dimensional (2D) transition metal dichalcogenides, MoTe is particularly interesting for phase-engineering applications, because it has the smallest free energy difference between the semiconducting 2H phase and metallic 1T' phase. In this work, we reveal that, under the proper circumstance, Mo and Te atoms can rearrange themselves to transform from a polycrystalline 1T' phase into a single-crystalline 2H phase in a large scale. We manifest the mechanisms of the solid-to-solid transformation by conducting density functional theory calculations, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy.

Direct synthesis of high-quality perovskite nanocrystals on a flexible substrate and deterministic transfer.

Solid-state perovskite nanocrystals are promising coherent light sources, as there is optical feedback within the crystal structure. In order to utilize the high performance of perovskites for on-chip applications, or observe new physical phenomena, these crystals must be integrated with pre-fabricated electronic or photonic structures. However, the material's fragility has made the deterministic transfer a great challenge thus far.

Influence of interface inhomogeneity on the electrical transport mechanism of CdSe nanowire/Au Schottky junctions.

Schottky junctions based on one-dimensional semiconductor nanomaterials, such as nanowires (NWs) and nanobelts (NBs), have been widely used in building high-performance nano-electric and nano-optoelectric devices during the past 15 years. Meanwhile, with considerable development in diverse application fields, more and more interests are turning to the investigation of the fundamental physics inside the junctions. The inhomogeneity of the interface between semiconductor NWs/NBs and metal electrodes has significant influence on the electrical transport mechanism of Schottky junctions.

Epitaxial Single-Layer MoS on GaN with Enhanced Valley Helicity.

Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec at room temperature based on bilayer n-MoS and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron-phonon interaction, resulting in a short exciton lifetime in the MoS /GaN heterostructure.

Author Correction: Anomalous in-plane anisotropic Raman response of monoclinic semimetal 1 T'-MoTe.

A correction to this article has been published and is linked from the HTML version of this paper. The error has not been fixed in the paper.

Unusual scaling laws for plasmonic nanolasers beyond the diffraction limit.

Plasmonic nanolasers are a new class of amplifiers that generate coherent light well below the diffraction barrier bringing fundamentally new capabilities to biochemical sensing, super-resolution imaging, and on-chip optical communication. However, a debate about whether metals can enhance the performance of lasers has persisted due to the unavoidable fact that metallic absorption intrinsically scales with field confinement. Here, we report plasmonic nanolasers with extremely low thresholds on the order of 10 kW cm at room temperature, which are comparable to those found in modern laser diodes.

A mixed-dimensional light-emitting diode based on a p-MoS nanosheet and an n-CdSe nanowire.

The construction of the mixed-dimensional van der Waals (vdW) heterostructures with two-dimensional (2D) and one-dimensional (1D) materials can advantageously integrate their respective dimensional properties to produce new device functionalities and/or enhance device performance. In this case, a single semiconductor nanowire (NW) can function as an optical cavity and a gain medium, while the atomically thin 2D material does not strongly absorb the NW's light emission or disturb the optical propagation mode. Therefore, the mixed-dimensional 2D/1D vdW heterostructure might provide a new route to realize high-efficiency light-emitting diodes (LEDs) and/or even electrically driven lasers.

K-Λ crossover transition in the conduction band of monolayer MoS under hydrostatic pressure.

Monolayer MoS is a promising material for optoelectronics applications owing to its direct bandgap, enhanced Coulomb interaction, strong spin-orbit coupling, unique valley pseudospin degree of freedom, etc. It can also be implemented for novel spintronics and valleytronics devices at atomic scale. The band structure of monolayer MoS is well known to have a direct gap at K (K') point, whereas the second lowest conduction band minimum is located at Λ point, which may interact with the valence band maximum at K point, to make an indirect optical bandgap transition.