Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology.

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports.

Maintaining Transparency of a Heated MEMS Membrane for Enabling Long-Term Optical Measurements on Soot-Containing Exhaust Gas.

Ensuring optical transparency over a wide spectral range of a window with a view into the tailpipe of the combustion engine, while it is exposed to the harsh environment of soot-containing exhaust gas, is an essential pre-requisite for introducing optical techniques for long-term monitoring of automotive emissions. Therefore, a regenerable window composed of an optically transparent polysilicon-carbide membrane with a diameter ranging from 100 µm up to 2000 µm has been fabricated in microelectromechanical systems (MEMS) technology. In the first operating mode, window transparency is periodically restored by pulsed heating of the membrane using an integrated resistor for heating to temperatures that result in oxidation of deposited soot (600-700 °C).

High-resolution MEMS inertial sensor combining large-displacement buckling behaviour with integrated capacitive readout.

Commercially available gravimeters and seismometers can be used for measuring Earth's acceleration at resolution levels in the order of (where g represents earth's gravity) but they are typically high-cost and bulky. In this work the design of a bulk micromachined MEMS device exploiting non-linear buckling behaviour is described, aiming for resolution by maximising mechanical and capacitive sensitivity. High mechanical sensitivity is obtained through low structural stiffness.