Equilibrium densities of intrinsic defects in transition metal diselenides of molybdenum and tungsten.

Point defects are thermodynamically stabilized in all crystalline materials, with increased densities negatively impacting the properties and performance of transition metal dichalcogenides (TMDs). While recent point defect reduction methods have led to considerable improvements in the optoelectronic properties of TMDs, there is a clear need for theoretical work to establish the lower limit of defect densities, as represented by thermal equilibrium. To that end, an ab initio and thermodynamic analysis of the equilibrium densities of intrinsic point defects in MoSe2 and WSe2 is presented.

Charge-transfer contacts for the measurement of correlated states in high-mobility WSe.

Two-dimensional semiconductors, such as transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for two-dimensional semiconductors that utilizes a charge-transfer layer to achieve large hole doping in the contact region, and implement this technique to measure the magnetotransport properties of high-purity monolayer WSe.

In situ via Contact to hBN-Encapsulated Air-Sensitive Atomically Thin Semiconductors.

Establishing reliable electrical contacts to atomically thin materials is a prerequisite for both fundamental studies and applications yet remains a challenge. In particular, the development of contact techniques for air-sensitive monolayers has lagged behind, despite their unique properties and significant potential for applications. Here, we present a robust method to create contacts to device layers encapsulated within hexagonal boron nitride (hBN).

Atomic Defect Quantification by Lateral Force Microscopy.

Atomic defects in two-dimensional (2D) materials impact electronic and optoelectronic properties, such as doping and single photon emission. An understanding of defect-property relationships is essential for optimizing material performance. However, progress in understanding these critical relationships is hindered by a lack of straightforward approaches for accurate, precise, and reliable defect quantification on the nanoscale, especially for insulating materials.

Spontaneous exciton dissociation in transition metal dichalcogenide monolayers.

Since the seminal work on MoS, photoexcitation in atomically thin transition metal dichalcogenides (TMDCs) has been assumed to result in excitons, with binding energies order of magnitude larger than thermal energy at room temperature. Here, we reexamine this foundational assumption and show that photoexcitation of TMDC monolayers can result in a substantial population of free charges. Performing ultrafast terahertz spectroscopy on large-area, single-crystal TMDC monolayers, we find that up to ~10% of excitons spontaneously dissociate into charge carriers with lifetimes exceeding 0.

Validating the Use of Conductive Atomic Force Microscopy for Defect Quantification in 2D Materials.

Defects significantly affect the electronic, chemical, mechanical, and optical properties of two-dimensional (2D) materials. Thus, it is critical to develop a method for convenient and reliable defect quantification. Scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) possess the required atomic resolution but have practical disadvantages.

Optical Imaging of Ultrafast Phonon-Polariton Propagation through an Excitonic Sensor.

Hexagonal boron nitride (hBN) hosts phonon polaritons (PhP), hybrid light-matter states that facilitate electromagnetic field confinement and exhibit long-range ballistic transport. Extracting the spatiotemporal dynamics of PhPs usually requires "tour de force" experimental methods such as ultrafast near-field infrared microscopy. Here, we leverage the remarkable environmental sensitivity of excitons in two-dimensional transition metal dichalcogenides to image PhP propagation in adjacent hBN slabs.

Two-Step Flux Synthesis of Ultrapure Transition-Metal Dichalcogenides.

Two-dimensional transition-metal dichalcogenides (TMDs) have attracted tremendous interest due to the unusual electronic and optoelectronic properties of isolated monolayers and the ability to assemble diverse monolayers into complex heterostructures. To understand the intrinsic properties of TMDs and fully realize their potential in applications and fundamental studies, high-purity materials are required. Here, we describe the synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination.