In this work, we present a theoretical photoluminescence (PL) for p-doped GaAs/InGaAsN nanostructures arrays. We apply a self-consistent k→p→ method in the framework of the effective mass theory. Solving a full 8 × 8 Kane's Hamiltonian, generalized to treat different materials in conjunction with the Poisson equation, we calculate the optical properties of these systems.
View Article and Find Full Text PDFNanoscale Res Lett
October 2012
In this work, we present theoretical results, using first-principle methods associated to the virtual crystal approximation model, for the vibrational mode frequencies of both the Ga1-xMnxN (in both cubic and hexagonal structures) and the Ga1-xMnxAs alloys, with the Mn contents in the range of 0% to 20%. The dependence of the calculated phonon frequencies with the Mn content was analyzed, and the results indicate that the phonon frequencies decrease with the increasing of Mn composition, leading to the false impression that they obey the Vegard rule in some cases. Moreover, the hexagonal Ga1-xMnxN alloys are elastically unstable for Mn concentrations at the order of 20%, which explains in part the experimentally observed deterioration of these alloys.
View Article and Find Full Text PDFThe electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.
View Article and Find Full Text PDFIn this article, using first-principles electronic structure calculations within the spin density functional theory, alternated magnetic and non-magnetic layers of rutile-CrO2 and rutile-SnO2 respectively, in a (CrO2)n(SnO2)n superlattice (SL) configuration, with n being the number of monolayers which are considered equal to 1, 2, ...
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