Connecting Higher-Order Topology with the Orbital Hall Effect in Monolayers of Transition Metal Dichalcogenides.

Monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase have been recently classified as higher-order topological insulators (HOTIs), protected by C_{3} rotation symmetry. In addition, theoretical calculations show an orbital Hall plateau in the insulating gap of TMDs, characterized by an orbital Chern number. We explore the correlation between these two phenomena in TMD monolayers in two structural phases: the noncentrosymmetric 2H and the centrosymmetric 1T.

Disentangling Orbital and Valley Hall Effects in Bilayers of Transition Metal Dichalcogenides.

It has been recently shown that monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase exhibit relatively large orbital Hall conductivity plateaus within their energy band gaps, where their spin Hall conductivities vanish [Canonico et al., Phys. Rev.

Spin and Charge Transport of Multiorbital Quantum Spin Hall Insulators.

The fabrication of bismuthene on top of SiC paved the way for substrate engineering of room temperature quantum spin Hall insulators made of group V atoms. We perform large-scale quantum transport calculations in these two-dimensional (2D) materials to analyze the rich phenomenology that arises from the interplay between topology, disorder, valley, and spin degrees of freedom. For this purpose, we consider a minimal multiorbital real-space tight-binding Hamiltonian and use a Chebyshev polynomial expansion technique.