A Fast-Transient-Response NMOS LDO with Wide Load-Capacitance Range for Cross-Point Memory.

In this paper, a fast-transient-response NMOS low-dropout regulator (LDO) with a wide load-capacitance range was presented to provide a V/2 read bias for cross-point memory. To utilize the large dropout voltage in the V/2 bias scheme, a fast loop consisting of NMOS and flipped voltage amplifier (FVA) topology was adopted with a fast transient response. This design is suitable to provide a V/2 read bias with 3.