Control of electronic topology in a strongly correlated electron system.

It is becoming increasingly clear that breakthrough in quantum applications necessitates materials innovation. In high demand are conductors with robust topological states that can be manipulated at will. This is what we demonstrate in the present work.

Electron Trapping Mechanism in LaAlO_{3}/SrTiO_{3} Heterostructures.

In LaAlO_{3}/SrTiO_{3} heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent Schrödinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. The amount of trapped electrons decays exponentially away from the interface.