Corrigendum: Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting.

[This corrects the article on p. 474 in vol. 10, PMID: 27857680.

Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting.

In this paper, we present an alternative approach to perform spike sorting of complex brain signals based on spiking neural networks (SNN). The proposed architecture is suitable for hardware implementation by using resistive random access memory (RRAM) technology for the implementation of synapses whose low latency (<1μs) enables real-time spike sorting. This offers promising advantages to conventional spike sorting techniques for brain-computer interfaces (BCI) and neural prosthesis applications.

Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.

Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switching memory (RRAM). Here, the RESET switching of HfO2-based RRAM was statistically investigated in terms of the CF conductance evolution.